Zobrazeno 1 - 5
of 5
pro vyhledávání: '"S. Ts. Krivoshchapov"'
Publikováno v:
Scopus-Elsevier
The in situ Hall effect measurements at room temperature showed that formation of the atomically clean Si(111) 7×7 surface as a result of high-temperature annealing (T=1250°C, t=120–180 s) of n-Si reverses the majority carrier sign at the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4efb816ab3591abd91ede784f35abba
https://doi.org/10.1134/1.1188076
https://doi.org/10.1134/1.1188076
Autor:
A. V. Konchenko, S. Ts. Krivoshchapov, D. L. Goroshko, N. G. Galkin, E. S. Zakharova, V. A. Ivanov
Publikováno v:
Surface Review and Letters. :257-265
By the method of in situ Hall effect measurements at room temperature, it was shown that the formation of a clean Si (111)(7×7) surface at high temperature annealing (T=1250°, t=120–180 s) of n-type conductivity silicon results in a change of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2286dc9bbfbf5b3f9ca13581a6071a1
https://doi.org/10.1142/s0218625x00000294
https://doi.org/10.1142/s0218625x00000294
Autor:
Leonid V. Sokolov, A. I. Nikiforov, B. Z. Ol’shanetskii, O. P. Pchelyakov, S. A. Teys, Yu. B. Bolkhovityanov, S. Ts. Krivoshchapov
Publikováno v:
Physics of the Solid State. 46:64-66
Different techniques for the fabrication of structures containing ensembles of ultrasmall germanium nanoclusters distributed with a high density over the substrate surface are discussed. How to control the morphology and ordering of these ensembles i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3610c5af58482dd2a1566b8ff4711303
https://doi.org/10.1134/1.1641922
https://doi.org/10.1134/1.1641922
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bee75f24989efe80081bb3a41a344aa
https://doi.org/10.1142/9789812796738_0045
https://doi.org/10.1142/9789812796738_0045
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55743d2ac8accab9c8b4e5eff776db34
https://doi.org/10.1142/9789812810076_0044
https://doi.org/10.1142/9789812810076_0044