Zobrazeno 1 - 1
of 1
pro vyhledávání: '"S. Th. Tokmoldin"'
Publikováno v:
Eurasian Chemico-Technological Journal, Vol 15, Iss 1, Pp 25-29 (2013)
Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same mol
Externí odkaz:
https://doaj.org/article/b0e0073a778e4831b2c139303173406f
