Zobrazeno 1 - 10
of 26
pro vyhledávání: '"S. Teodoropol"'
Autor:
S. Teodoropol, Hans Zogg
Publikováno v:
Journal of Crystal Growth. 150:1186-1189
Epitaxial narrow gap PbSe is grown by MBE (molecular beam epitaxy) onto Si(111) substrates with the aid of a BaF 2 /CaF 2 buffer layer. The tensile strain which builds up on cool-down after growth due to the thermal expansion mismatch is relaxed by c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eebde910520d0bd927ad3d217faf8d2f
https://doi.org/10.1016/0022-0248(95)80126-w
https://doi.org/10.1016/0022-0248(95)80126-w
Autor:
C. Maissen, A. Dommann, S. Teodoropol, G. Kostorz, Stefan Blunier, Hans Zogg, Alexander Fach, P. Müller, T. Richmond, V. Meyer
Publikováno v:
Physical Review B. 50:10801-10810
The thermal mismatch strain in stacks containing PbSe, ${\mathrm{BaF}}_{2}$, and/or ${\mathrm{CaF}}_{2}$ on Si(111) substrates is relieved by the glide of dislocations in the principal 〈110〉{100} glide system. The strain in the ${\mathrm{BaF}}_{2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95c1f0308c07f7325686d8427d7cb581
https://doi.org/10.1103/physrevb.50.10801
https://doi.org/10.1103/physrevb.50.10801
Autor:
H. Haefke, Stefan Blunier, T. Richmond, C. Maissen, René M. Overney, S. Teodoropol, Hans Zogg
Publikováno v:
Journal of Crystal Growth. 127:668-671
The thermal mismatch strain introduced by the different thermal expansion of fluorides, IV-VI materials and the Si(111) substrate is relieved by glide of dislocations in the primary {100}〈110〉 glide system with glide planes inclined to the surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b58635f12efdba0f5eaf1b6c7e4ea6
https://doi.org/10.1016/0022-0248(93)90707-4
https://doi.org/10.1016/0022-0248(93)90707-4
Autor:
Stefan Blunier, C. Verie, A. Freundlich, Bernard Beaumont, A.N. Tiwari, Hans Zogg, S. Teodoropol
Publikováno v:
Journal of Crystal Growth. 124:565-569
Metalorganic vapor phase epitaxy has been used for the first time to grow epitaxial GaAs layers on (111) and (100) oriented Si either using CaF2 or stacked (Ca,Sr)F2/CaF2 as a buffer. The GaAs layers show sharp and well resolved electron channeling p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dc9c72bdd03608308a9bb4f19c2ba9
https://doi.org/10.1016/0022-0248(92)90518-n
https://doi.org/10.1016/0022-0248(92)90518-n
Autor:
J. Masek, C. Maissen, W.J. Borer, Stefan Blunier, T. Hoshino, Ayodhya N. Tiwari, S. Teodoropol, Hans Zogg
Publikováno v:
Infrared Physics. 32:169-175
Epitaxial narrow gap lead chalcogenide layers were grown on Si-substrates with the aid of an intermediate epitaxial CaF2-BaF2 buffer by molecular beam epitaxy. Maximum growth temperatures were as low as 450°C both for the buffer and lead chalcogenid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::894769a69343f2e4fb35ba5dbbd801af
https://doi.org/10.1016/0020-0891(91)90107-q
https://doi.org/10.1016/0020-0891(91)90107-q
Publikováno v:
Sixth International Conference Metalorganic Vapor Phase Epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6898a099c79d1993fbcce6ae32dc4d3
https://doi.org/10.1109/movpe.1992.664971
https://doi.org/10.1109/movpe.1992.664971
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 63:56-58
RBS axial channeling is used to determine channel-angle differences with an accuracy approaching a few mdeg. Measurements in bulk Si and in a strained BaF2 are described.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e18ef206574cf71ee9f588ce318380b
https://doi.org/10.1016/0168-583x(92)95168-q
https://doi.org/10.1016/0168-583x(92)95168-q
Publikováno v:
MRS Proceedings. 379
The strain induced by the thermal mismatch in Pbl−xSnxSe and other IV–VI compound layers on Si(111)-substrates relaxes by glide of dislocations in the main {001}-glide system. The glide planes are arranged with 3-fold symmetry and inclined to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67195f85e0765aa92e92460f22e3a25a
https://doi.org/10.1557/proc-379-27
https://doi.org/10.1557/proc-379-27
Publikováno v:
MRS Proceedings. 299
Epitaxial narrow gap IV-VI layers on Si-substrates offer an alternate to Hg1−xCdxTe for IR-focal plane arrays with similar ultimate sensitivities. We report on the following improvements in reaching the goal of an easily producible fully monolithic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd1d053e16797fa37da26205d99f4a5
https://doi.org/10.1557/proc-299-279
https://doi.org/10.1557/proc-299-279
Autor:
K. Kessler, Stefan Blunier, Peter Mueller, Alexander Fach, Hans Zogg, S. Teodoropol, Carmine Paglino, J. Masek, C. Maissen, Ayodhya N. Tiwari
Publikováno v:
SPIE Proceedings.
MBE growth and infrared device fabrication with epitaxial lV-VI layers on Si-substrates is reviewed and somenew results are included. Epitaxy is achieved using a stacked BaF2/CaF2 or CaF2 buffer layer. While photolitho-graphic delineation techniques
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8887522b685fb46c33f6ccb6b82a5e7
https://doi.org/10.1117/12.164936
https://doi.org/10.1117/12.164936