Zobrazeno 1 - 10
of 59
pro vyhledávání: '"S. Taking"'
Publikováno v:
Active and Passive Electronic Components, Vol 2011 (2011)
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant impr
Externí odkaz:
https://doaj.org/article/46cd9d1900cf4e9e8860bc7ed0035f62
Autor:
M. K. Md Arshad, Shahrir R. Kasjoo, M. Mohamad Isa, Zarimawaty Zailan, N. F. Zakaria, S. Taking
Publikováno v:
Bulletin of Electrical Engineering and Informatics. 8:396-404
In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosyst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9265b8db02d3a03d3209c8b87715e803
https://doi.org/10.11591/eei.v8i2.1413
https://doi.org/10.11591/eei.v8i2.1413
Publikováno v:
PROCEEDINGS OF 8TH INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS ENGINEERING & TECHNOLOGY (ICAMET 2020).
This paper presents a review of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology appropriate in high-power and high-frequency applications. GaN, as wide bandgap materials (WBG) has demonstrated superior material properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86156e6bf659f9205bdb96402a7fe7e6
https://doi.org/10.1063/5.0056137
https://doi.org/10.1063/5.0056137
Autor:
M. Mohamad Isa, Shahrir R. Kasjoo, M. K. Md Arshad, S. Taking, Zarimawaty Zailan, N. F. Zakaria
Publikováno v:
Solid-State Electronics. 138:16-23
Characterization on an InGaAs-based self-switching diode (SSD) using technology computer aided design (TCAD) aimed for optimizing the electrical rectification performance of the device is reported. The rectifying performance is mainly contributed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18eaf3eb4a899601e664df0ddf672956
https://doi.org/10.1016/j.sse.2017.07.002
https://doi.org/10.1016/j.sse.2017.07.002
Publikováno v:
AIP Conference Proceedings.
This paper present the new 16×16 signed multiplier design using Booth architecture and Vedic architecture. The Booth architecture is based on Radix-4 Booth multiplier which reduces the number of partial product generated into almost half. Vedic arch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66768acbfcc48b0bef9b07a6a7e1a66f
https://doi.org/10.1063/1.5080898
https://doi.org/10.1063/1.5080898
Autor:
S. Taking, A. Kamarudin, Razaidi Hussin, M. H. A. Aziz, S. N. Mohyar, S. J. Cheah, Shahrir R. Kasjoo
Publikováno v:
AIP Conference Proceedings.
This study proposes thermal imaging technique to enhance visualization of a detected human face inside a detected car. Although an infrared camera it is more commonly used in industrial and military, but software application has the advantages by ima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98b79978ff27d19c38ac86aaaa54234f
https://doi.org/10.1063/1.5080899
https://doi.org/10.1063/1.5080899
Autor:
Mohd Natashah Norizan, S. Taking, Suhaila Mohd Zahari, Rozana Aina Maulat Osman, Ili Salwani Mohamad, Azura Malini
Publikováno v:
Applied Mechanics and Materials. :1182-1186
In this paper, the contribution of Indium (In) to the Gallium Phosphide (GaP) composition of solar cell was investigated to know the effectiveness of the In when its being substitute to GaP layer on the top layer of Silicon (Si) substrate. The substi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29dfd3402007b0431de7ccb335bac1a
https://doi.org/10.4028/www.scientific.net/amm.754-755.1182
https://doi.org/10.4028/www.scientific.net/amm.754-755.1182
Publikováno v:
AIP Conference Proceedings.
By introducing a funnel-shape semiconductor channel to create an asymmetrical energy barrier profile, a type of nonlinear device has been proposed and simulated which is referred as planar barrier diode (pbd). An applied voltage v across a pbd provid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86b9d045d8cd9860d311621b7c9203c4
https://doi.org/10.1063/1.5002433
https://doi.org/10.1063/1.5002433
Autor:
M. K. Md Arshad, N. F. Zakaria, S. Taking, Zarimawaty Zailan, M. Mohamad Isa, Shahrir R. Kasjoo
Publikováno v:
AIP Conference Proceedings.
A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar archite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::025a85c389fa72b78ad1dd1d16c721d0
https://doi.org/10.1063/1.5002451
https://doi.org/10.1063/1.5002451
Autor:
R. Brown, Abdullah Al-Khalidi, Edward Wasige, G. Ternent, S. Taking, Iain G. Thayne, D. MacFarlane
Publikováno v:
physica status solidi c. 11:844-847
This paper presents first results of a new high performance enhancement-mode (E-mode) gallium nitride (GaN) based metal-oxide semiconductor high electron mobility transistor (MOS-HEMT) that employs an ultrathin 3 nm aluminium gallium nitride (Al0.25G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8aa19468d26725ddb666a4844ab491
https://doi.org/10.1002/pssc.201300179
https://doi.org/10.1002/pssc.201300179