Zobrazeno 1 - 10
of 269
pro vyhledávání: '"S. T. PICRAUX"'
Autor:
Minghui Liang, Shadi A. Dayeh, Bin Luo, Linjie Zhi, Bin Wang, Xianglong Li, Meihua Jin, S. T. Picraux, Xianfeng Zhang
Publikováno v:
ACS Nano. 7:1437-1445
Silicon has been touted as one of the most promising anode materials for next generation lithium ion batteries. Yet, how to build energetic silicon-based electrode architectures by addressing the structural and interfacial stability issues facing sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d78bb6bc063e4065f4e53f19d628a580
https://doi.org/10.1021/nn3052023
https://doi.org/10.1021/nn3052023
Publikováno v:
Nano Letters. 12:6334-6338
Recent success in the fabrication of axial and radial core-shell heterostructures, composed of one or more layers with different properties, on semiconductor nanowires (NWs) has enabled greater control of NW-based device operation for various applica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a062d4f239871efd2ea6e8f0277f8623
https://doi.org/10.1021/nl303502f
https://doi.org/10.1021/nl303502f
Autor:
Shixiong Zhang, Rohit P. Prasankumar, Q. X. Jia, Yongqiang Wang, S. T. Picraux, M.J. Zhuo, Li Yan, Jingbo Qi
Publikováno v:
Thin Solid Films. 520:6459-6462
We have grown high quality epitaxial topological insulator Bi 2 Te 3 thin films on silicon (111) substrates by pulsed laser deposition. Systematic structural characterization of the films using X-ray diffraction and transmission electron microscopy h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de1858a54988a89fada4a31d5c8e8006
https://doi.org/10.1016/j.tsf.2012.07.012
https://doi.org/10.1016/j.tsf.2012.07.012
Autor:
Sanjeev Singh, Aditya D. Mohite, Han Htoon, S. T. Picraux, Daniel E. Perea, Ian Campbell, Shadi A. Dayeh
Publikováno v:
Nano Letters. 12:1965-1971
VLS-grown semiconductor nanowires have emerged as a viable prospect for future solar-based energy applications. In this paper, we report highly efficient charge separation and collection across in situ doped Si p-n junction nanowires with a diameter1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17038a363f0e60b9e41d00e222cfd54d
https://doi.org/10.1021/nl204505p
https://doi.org/10.1021/nl204505p
Autor:
Yingying Zhang, Jeong Hyun Cho, Darrick J. Williams, Shadi A. Dayeh, Xianglong Li, S. T. Picraux, Nan Li
Publikováno v:
Advanced Energy Materials. 2:87-93
Advanced lithium-ion batteries with high energy density, highrate capability, and excellent cycling performance are critically important for automotive and stationary energy storage applications such as electric vehicles, portable electronics, power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae7e4c1b7bc5cd5f551687643629056a
https://doi.org/10.1002/aenm.201100519
https://doi.org/10.1002/aenm.201100519
Autor:
S. T. Picraux, Prashanth C. Upadhya, Rohit P. Prasankumar, Shadi A. Dayeh, A. J. Taylor, Ayan Kar
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:889-895
We present the first ultrafast optical pump-probe spectroscopic measurements, to the best of our knowledge, on silicon nanowires (SiNWs). In this study, we performed femtosecond pump-probe measurements on vapor-liquid-solid-grown SiNWs to investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90ad3e0ea08d9bdb528e88f55c4ef4cd
https://doi.org/10.1109/jstqe.2010.2076399
https://doi.org/10.1109/jstqe.2010.2076399
Autor:
Michael Nastasi, Joshua Monk, Diana Farkas, Y.Q. Wang, S. T. Picraux, Alfredo Caro, Luis A. Zepeda-Ruiz, Farid F. Abraham, Mark A. Duchaineau, Amit Misra, Eduardo M. Bringa
Publikováno v:
Nano Letters. 12:3351-3355
The key to perfect radiation endurance is perfect recovery. Since surfaces are perfect sinks for defects, a porous material with a high surface to volume ratio has the potential to be extremely radiation tolerant, provided it is morphologically stabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1704d4ecf8f14f26912e8ea3bfcdc5c3
https://doi.org/10.1021/nl201383u
https://doi.org/10.1021/nl201383u
Autor:
Shadi A. Dayeh, S. T. Picraux
Publikováno v:
Nano Letters. 10:4032-4039
Progress in the synthesis of semiconductor nanowires (NWs) has prompted intensive inquiry into understanding the science of their growth mechanisms and ultimately the technological applications they promise. We present new results for the size-depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::118a08ccd7e62bbd0c703dafa3eceebd
https://doi.org/10.1021/nl1019722
https://doi.org/10.1021/nl1019722
Publikováno v:
Nano Letters. 10:2126-2132
We report the fabrication of arrays of single and multiple out-of-plane nanowire devices on a single substrate, an important step for the fabrication of novel three-dimensional devices and the integration of individually addressable nanowires onto cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32cfb0eda1dd4c84802839f11e4c0e3e
https://doi.org/10.1021/nl100747w
https://doi.org/10.1021/nl100747w
Publikováno v:
ACS Nano. 4:1209-1217
Semiconductor nanowires (NWs) are being actively investigated due to their unique functional properties which result from their quasi-one-dimensional structure. However, control over the crystallographic growth direction, diameter, location, and morp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c80e08dad0e8fa9b93fc8f807d4bb59
https://doi.org/10.1021/nn901664r
https://doi.org/10.1021/nn901664r