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pro vyhledávání: '"S. T. Nakagawa"'
Autor:
S. T. Nakagawa
Publikováno v:
Electrical Engineering in Japan. 177:54-61
We have proposed a numerical methodology called the pixel mapping (PM) method which is based on crystallography. The PM method can characterize various types of defects in 24 prototype crystals listed in the Strukturbericht database. It identifies po
Autor:
S. T. Nakagawa
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 137:389-389
Autor:
S. T. Nakagawa
Publikováno v:
physica status solidi (b). 178:87-98
In order to examine the dependence of the electronic stopping power (dE/dx) on the impact parameter p, the energy dissipation of axially channeled ions with curved trajectories is studied theoretically by means of a cluster model. dE/dx is accounted
Autor:
S. Sangyuenyongpipat, H. J. Whitlow, S. T. Nakagawa, E. Yoshida, Floyd D. McDaniel, Barney L. Doyle
Publikováno v:
AIP Conference Proceedings.
MeV ion beam lithographies are very powerful techniques for 3D direct writing in positive or negtive photoresist materials. Nanometer‐scale rough structures, or clear areas with straight vertical sidewalls as thin as a few 10’s of nm in a resist
Autor:
J. P. Biersack, S. T. Nakagawa, A. La Ferla, Alberto Carnera, G. Galvagno, Vito Raineri, Emanuele Rimini
Publikováno v:
Radiation Effects and Defects in Solids. 116:211-217
The profiles of boron ions impinging along the axis of silicon single crystal at energies in the 80–700 keV range were measured by SIMS. By a simple subtraction procedure the distributions for aligned incidence of the beam were decomposed into a ra
Autor:
S. T. Nakagawa
Publikováno v:
Radiation Effects and Defects in Solids. 116:21-28
A general interatomic potential is given, which is based on a new combination rule for the screening length. It depends only on the atomic numbers of collision partners. It is compared to accurate potentials. In cases of K+ → W and Ar+ → Cu colli
Autor:
S. T. Nakagawa, A. Okamoto, M. Ohishi, H. Saito, H. Hashimoto, G. Betz, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Ion‐beam irradiation onto a crystal often causes defects that cannot be completely annealed out. We had found a new candidate of such a thermally persistent defect in 3C‐SiC using an empirical Molecular Dynamics simulation at a high temperature o
Publikováno v:
Journal of Physics: Conference Series. 488:152001
We have examined the matrix effect on the excitation spectra of Xe atom that is embedded in a solid state para-hydrogen (p-H2)n at liquid helium temperature, making use of the ab-initio molecular orbital calculation. The crystal structure of the soli