Zobrazeno 1 - 10
of 16
pro vyhledávání: '"S. T. Ang"'
Publikováno v:
Experimental Cell Research. 312:156-170
Human wild type (WT) and mutant alpha-synuclein (alpha-syn) genes were overexpressed using a Tet-on expression system in stably transfected dopaminergic MN9D cells. Their overexpression induced caspase-independent and dopamine-related apoptosis not r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c72d2bd168e37c7655af9c9e74aac965
https://doi.org/10.1016/j.yexcr.2005.10.012
https://doi.org/10.1016/j.yexcr.2005.10.012
Publikováno v:
Annals of the Academy of Medicine, Singapore. 33(1)
At present, 7.2% of the population in Singapore is in the geriatric age group, which will increase to 18.4% in the year 2030. The frailest segment of the geriatric population live in nursing homes. They suffer from multiple co-morbidities requiring m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f83d988c29059bda53d1e1934a34ca96
https://pubmed.ncbi.nlm.nih.gov/15008562
https://pubmed.ncbi.nlm.nih.gov/15008562
Akademický článek
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Publikováno v:
Solar Cells. 21:73-80
Cadmium telluride has long been recognized as a promising thin film photovoltaic material. Polycrystalline thin film CdS/CdTe heterojunction solar cells have been prepared by several techniques with various degrees of success. In this work the invert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50dd221e7f46d32d88a3cf6f3aadbcac
https://doi.org/10.1016/0379-6787(87)90106-2
https://doi.org/10.1016/0379-6787(87)90106-2
Surface passivation and oxidation of cadmium telluride and properties of metal‐oxide‐CdTe structures
Publikováno v:
Journal of Applied Physics. 58:3206-3210
The oxidation of single‐crystal p‐type CdTe of {111} orientation by thermal, wet chemical, and plasma techniques has been investigated. The C‐V measurements of metal‐oxide‐semiconductor (MOS) structures prepared from various oxides indicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd0c81764975ea56c6bb938b0f862d60
https://doi.org/10.1063/1.335830
https://doi.org/10.1063/1.335830
Publikováno v:
Journal of Applied Physics. 60:4268-4272
Hydrogenated amorphous silicon (a‐Si:H) films have been deposited on Corning 7059 glass and other substrates by the thermal decomposition of disilane in a helium flow. The deposition rate of a‐Si:H films in a He atmosphere has been found to be si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c45383dd13a7ff240e99ec7629a3d07
https://doi.org/10.1063/1.337467
https://doi.org/10.1063/1.337467
Publikováno v:
Journal of Applied Physics. 59:3122-3125
The density of gap states in hydrogenated amorphous silicon (a‐Si:H) films deposited by the pyrolysis of disilane in a hydrogen atmosphere has been determined by four techniques. The photothermal deflection spectroscopy was used to determine the ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee2f3784484b5fe0a7c1da6f0b456746
https://doi.org/10.1063/1.336889
https://doi.org/10.1063/1.336889
Publikováno v:
Journal of Applied Physics. 58:4296-4299
Al/p‐CdTe Schottky barriers diodes were prepared from the Te (111) face of lightly doped p‐type CdTe single crystals. The characteristics of the diodes have been found to depend strongly on the surface preparation of CdTe. The current‐voltage c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4914ca5b2a79ca5854132d7391953bc
https://doi.org/10.1063/1.335515
https://doi.org/10.1063/1.335515
Publikováno v:
Journal of Applied Physics. 64:1233-1237
The electrical properties of n‐CdS/p‐CdTe heterojunctions depend strongly on the cleanliness of the interface region. In this work, CdTe films were deposited on CdS/glass substrates by close‐spaced sublimation (CSS) under various conditions. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f709c6a940520ed555054235aeec634
https://doi.org/10.1063/1.341840
https://doi.org/10.1063/1.341840
Publikováno v:
Journal of Applied Physics. 59:1319-1322
The thermal decomposition of disilane (Si2H6) in a hydrogen or helium flow has been used for the deposition of hydrogenated amorphous‐silicon (a‐Si:H) films on the surface of Corning 7059 glass substrates at 450–500 °C. The reaction product co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad7de01ddf3d2a0cdf704e5fc85ec710
https://doi.org/10.1063/1.336525
https://doi.org/10.1063/1.336525