Zobrazeno 1 - 10
of 409
pro vyhledávání: '"S. Starschich"'
Publikováno v:
Solar Energy Materials and Solar Cells. 191:422-426
We present a record-high solar-to-hydrogen conversion efficiency (STH) for monolithic all-silicon multi-junction solar devices. The device is based on an interdigitated back-contact silicon solar cell, in which the p- and n-regions are connected in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa375f3112167b3032efca834e383d7
https://doi.org/10.1016/j.solmat.2018.11.004
https://doi.org/10.1016/j.solmat.2018.11.004
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
U. Boettger, S. Starschich
Publikováno v:
Journal of Materials Chemistry C. 5:333-338
The ferroelectric properties of hafnium oxide based thin films prepared by chemical solution deposition (CSD) are investigated. In this extensive study, a wealth of strongly different dopants (size and valence) and dopant concentrations is used to in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cf03c134ef5ddac99a1dd23eff2109d
https://doi.org/10.1039/c6tc04807b
https://doi.org/10.1039/c6tc04807b
Autor:
Akira Toriumi, Han Joon Kim, Chris M. Fancher, Min Hyuk Park, Cheol Seong Hwang, Ulrich Böttger, Uwe Schroeder, Xuan Tian, S. Starschich, Tony Schenk
The ferroelectricity in fluorite-structure type oxide thin films can be attributed to the stabilization of a noncentrosymmetric orthorhombic phase (space group: Pca21), which is a nonequilibrium phase of bulk HfO2 or ZrO2. Various mechanisms, includi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7857e06e0c088da27a204fab37065fe
https://doi.org/10.1016/b978-0-08-102430-0.00011-5
https://doi.org/10.1016/b978-0-08-102430-0.00011-5
Chemical solution deposition is a suitable technique for the fabrication of ferroelectric films composed of doped hafnia and zirconia as well as mixtures of them, in a wide thickness range from 14 to 390 nm. It is shown that, in a specific concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd4c95050a86797edc59c13870c13eb4
https://doi.org/10.1016/b978-0-08-102430-0.00010-3
https://doi.org/10.1016/b978-0-08-102430-0.00010-3
Autor:
Maarten Debucquoy, Noël Wilck, Barry O'Sullivan, Joachim Knoch, S. Starschich, S. Nordmann, Joachim John, B. Berghoff, A. Hessel
Publikováno v:
Renewable Energy. 94:90-95
We present a silicon-based, monolithic multi-junction solar device that is suitable for the sustainable and reliable production of hydrogen. It is based on an interdigitated back-contact (IBC) solar cell which is modified, so that the p- and n-region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e11e023cfd697b56308dc4aaaf1f8e8f
https://doi.org/10.1016/j.renene.2016.03.050
https://doi.org/10.1016/j.renene.2016.03.050
Publikováno v:
physica status solidi (a). 213:316-319
For any application of redox-based resistive switching devices understanding of variability is of major interest. In this work, we analyze the dependence of the SET switching time in pulse measurements of TiN/HfOx/Pt devices on the initial state befo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d330696733cbd95e7f781fe6eeb1ed
https://doi.org/10.1002/pssa.201532375
https://doi.org/10.1002/pssa.201532375
Autor:
Tony Schenk, Franz P. G. Fengler, Thomas Mikolajick, Min Hyuk Park, Ulrich Böttger, Milan Pešić, S. Starschich, Theodor Schneller, Uwe Schroeder
Publikováno v:
ESSDERC
Ferroelectric random access memories (FRAM) are nonvolatile memories which allow a fast access time and a low power consumption. State-of-the-art devices are based on the perovskite lead zirconate titanate (PZT), which suffers from CMOS incompatibili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f3e19e048e005e2f69f57c9db57efc5
https://doi.org/10.1109/essderc.2016.7599663
https://doi.org/10.1109/essderc.2016.7599663
Publikováno v:
Applied physics letters 108(3), 032903-(2016). doi:10.1063/1.4940370
The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the amount of cycles but the duration of the applied electrical fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c62c0380bea88f79835bdf86f3a446e4
https://hdl.handle.net/2128/17275
https://hdl.handle.net/2128/17275
Autor:
S. Starschich, Ulrich Böttger
Publikováno v:
Journal of Applied Physics. 123:044101
The ferroelectric and piezoelectric properties of doped ZrO2 prepared by chemical solution deposition (CSD) are investigated. Doping with different elements such as Mg, In, La, and Y leads to a stabilization of the constricted hysteresis. As shown in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b225db53d56fd4d47901cba083b39731
https://doi.org/10.1063/1.4997681
https://doi.org/10.1063/1.4997681