Zobrazeno 1 - 10
of 1 613
pro vyhledávání: '"S. Speck"'
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041108-041108-6 (2023)
We report the continuous Si doping in β-Ga2O3 epitaxial films grown by plasma-assisted molecular beam epitaxy through the use of a valved effusion cell for the Si source. Secondary ion mass spectroscopy results exhibit that the Si doping profiles in
Externí odkaz:
https://doaj.org/article/54c869bdfb52411cb7b4fc9349764c15
Autor:
Matthew S. Wong, Aditya Raj, Hsun-Ming Chang, Vincent Rienzi, Feng Wu, Jacob J. Ewing, Emily S. Trageser, Stephen Gee, Nathan C. Palmquist, Philip Chan, Ji Hun Kang, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Steven P. DenBaars
Publikováno v:
AIP Advances, Vol 13, Iss 1, Pp 015107-015107-5 (2023)
The electrical performances of III-nitride blue micro-light-emitting diodes (µLEDs) with different tunnel junction (TJ) epitaxial architectures grown by metalorganic chemical vapor deposition are investigated. A new TJ structure that employs AlGaN i
Externí odkaz:
https://doaj.org/article/ec2e47f313eb46dda386c0c0156ff6dc
Autor:
Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, Takeki Itoh, Sriram Krishnamoorthy, James S. Speck
Publikováno v:
APL Materials, Vol 10, Iss 11, Pp 111104-111104-6 (2022)
We report on vertical β-Ga2O3 power diodes with oxidized-metal Schottky contact (PtOx) and high permittivity (high-κ) dielectric (ZrO2) field plate to improve reverse blocking at both Schottky contact surfaces and edges. The PtOx diodes showed exce
Externí odkaz:
https://doaj.org/article/9ae106488dbc4c0f879bf6357e46dd99
Autor:
Erin P. Vaughan, Julianne S. Speck, Paul J. Frick, Toni M. Walker, Emily L. Robertson, James V. Ray, Tina D. Wall Myers, Laura C. Thornton, Laurence Steinberg, Elizabeth Cauffman
Publikováno v:
Development and Psychopathology. :1-9
Research on proactive and reactive aggression has identified covariates unique to each function of aggression, but hypothesized correlates have often not been tested with consideration of developmental changes in or the overlap between the types of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc640779035096b90b503c3f9c126a2c
https://doi.org/10.1017/s0954579423000317
https://doi.org/10.1017/s0954579423000317
Autor:
R. M. Cadena, D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, B. R. Tuttle, S. T. Pantelides, A. F. Witulski, K. F. Galloway, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 70:363-369
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::340eef344cbfa124dcf134df85554130
https://doi.org/10.1109/tns.2023.3237979
https://doi.org/10.1109/tns.2023.3237979
Autor:
Matthew S. Wong, Philip Chan, Norleakvisoth Lim, Haojun Zhang, Ryan C. White, James S. Speck, Steven P. Denbaars, Shuji Nakamura
Publikováno v:
Crystals, Vol 12, Iss 5, p 721 (2022)
In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm2 for device dimensions from 5 × 5 to 100
Externí odkaz:
https://doaj.org/article/469a83544a97432fb182f528dd02d45c
Autor:
Panpan Li, Hongjian Li, Matthew S. Wong, Philip Chan, Yunxuan Yang, Haojun Zhang, Mike Iza, James S. Speck, Shuji Nakamura, Steven P. Denbaars
Publikováno v:
Crystals, Vol 12, Iss 4, p 541 (2022)
InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive. Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of InGaN red µLEDs has less influence from the size effect. Moreover, the InGaN
Externí odkaz:
https://doaj.org/article/8f9495fbca4749bf97199bf80c52ec61
Autor:
Fikadu Alema, Yuewei Zhang, Akhil Mauze, Takeki Itoh, James S. Speck, Brian Hertog, Andrei Osinsky
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085002-085002-5 (2020)
The role of water (H2O) vapor in reducing background impurity concentration in epitaxial Ga2O3 thin films grown by metalorganic chemical vapor deposition (MOCVD) was studied. Adding H2O vapor to oxygen was found to increase the surface roughness and
Externí odkaz:
https://doaj.org/article/4398800e478f4c15b0863c434153385b
Publikováno v:
APL Materials, Vol 8, Iss 2, Pp 021104-021104-6 (2020)
In this work, the growth of (010), (001), and 2¯01 β-Ga2O3 by plasma assisted molecular beam epitaxy was investigated. The presence of an indium flux during growth markedly expands the growth regime for β-Ga2O3 across all orientations to higher gr
Externí odkaz:
https://doaj.org/article/7f055997b48e474bb08d539efbf302e7
Autor:
Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nazar Orishchin, Nicholas Valente, Akhil Mauze, James S. Speck
Publikováno v:
APL Materials, Vol 8, Iss 2, Pp 021110-021110-9 (2020)
We report on record low free carrier concentration values in metalorganic chemical vapor deposition (MOCVD) grown β-Ga2O3 by using N2O for oxidation. Contrary to the pure oxygen, the N2O oxidant produced β-Ga2O3 thin films co-doped with nitrogen an
Externí odkaz:
https://doaj.org/article/5dea3414848e4a1f9acd5d590b2b6a42