Výsledky vyhledávání

Characterization of the PSG/Si interface of H3PO4 doping process for solar cells

Autor: Agata Lachowicz, Berthold Schum, Jörg Horzel, G. Blendin, S. Solmi, D. Nobili, A. Armigliato

Publikováno v: Solar Energy Materials and Solar Cells. 95:3099-3105

The precipitation of P in the emitter region of H 3 PO 4 spray doped silicon for solar cell applications has been investigated by electron microscopy, X-ray microanalysis and electrical measurements after annealing for two different times. P, Si and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44982403d3a1022b8fbec4c1f554a41f
https://doi.org/10.1016/j.solmat.2011.06.042

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Clustering equilibrium and deactivation kinetics in arsenic doped silicon

Autor: Jiajia Shao, S. Solmi, D. Nobili

Publikováno v: Journal of Applied Physics. 90:101-107

The equilibrium between clusters and dopant in solution was studied on silicon on insulator specimens uniformly doped with As at concentrations CAs from 1 to 7.6×1020 cm−3. The values of the carrier density n* after equilibration at 700, 800, and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c5205b959f2d7ae3001db13af082417
https://doi.org/10.1063/1.1377607

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Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions

Autor: S. Solmi, Marco Bianconi, Enrico Napolitani, Alberto Carnera, Giorgio Lulli

Publikováno v: Journal of Applied Physics. 87:8461-8466

The influence of defects injected by room temperature, high-energy implantation of Si and As ions on the diffusion of Sb marker in Si is investigated. MeV ions induce transient enhanced diffusion (TED) of ion implanted Sb, which increases with increa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a14e7a1188fb069df79998afb2ad3b2c
https://doi.org/10.1063/1.373564

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Effects of donor concentration on transient enhanced diffusion of boron in silicon

Autor: M. Bersani, S. Solmi

Publikováno v: Journal of Applied Physics. 87:3696-3699

The effects of substrate donor concentration on transient enhanced diffusion (TED) of boron implanted into silicon wafers predoped with arsenic or phosphorus have been investigated by using secondary ion mass spectroscopy and theoretical simulations.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf1b5f68c02f7bd1eb4dc5b4f026cb48
https://doi.org/10.1063/1.372402

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Reverse annealing, clustering, and electron mobility in arsenic doped silicon

Autor: D. Nobili, Jiajia Shao, S. Solmi

Publikováno v: Journal of Applied Physics. 87:658-662

The reverse annealing phenomena and the nature of the As clusters were studied on silicon on insulator samples uniformly doped with As at concentrations up to 7.6×1020 cm−3. Carrier concentration and electron mobility were determined by Hall and r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::278164cc427b21600902110735105245
https://doi.org/10.1063/1.371922

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Deactivation Kinetics in Heavily Arsenic‐Doped Silicon

Autor: Jiajia Shao, M. Merli, D. Nobili, S. Solmi

Publikováno v: Journal of The Electrochemical Society. 146:4246-4252

The kinetics of electrical deactivation of As-doped silicon was studied at temperatures from 450 to 700°C by using samples doped in the range from 1 × 10 20 to 1.7 × 10 21 cm -3 . Twelve types of specimens were obtained by As implantation at 100 k

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40deaf21801b364ed2ff5e4a3adfbd42
https://doi.org/10.1149/1.1392622

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High concentration diffusivity and clustering of arsenic and phosphorus in silicon

Autor: D. Nobili, S. Solmi

Publikováno v: Journal of Applied Physics. 83:2484-2490

The As diffusion coefficient as a function of its concentration was determined by Boltzmann–Matano analysis of the profiles of the dopant diffusing out of its conjugate phase precipitates during furnace annealing at 900 and 1050 °C of samples heav

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ccf20db4e586c0697f953950ff99a26
https://doi.org/10.1063/1.367008

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Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires

Autor: F. Suriano, M. Ferri, F. Moscatelli, F. Mancarella, L. Belsito, S. Solmi, A. Roncaglia, D. Narducci

Publikováno v: ICT2013, the 32nd International Conference on Thermoelectrics, 2013
info:cnr-pdr/source/autori:F. Suriano, M. Ferri, F. Moscatelli, F. Mancarella, L. Belsito, S. Solmi, A. Roncaglia, and D. Narducci/congresso_nome:ICT2013, the 32nd International Conference on Thermoelectrics/congresso_luogo:/congresso_data:2013/anno:2013/pagina_da:/pagina_a:/intervallo_pagine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::dcdb3bf03ea7f6afbf7ded141a225182
http://www.cnr.it/prodotto/i/302730

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Fabrication and Thermoelectric Characterization of Surface-Micromachined Silicon Nanowires

Autor: M. Ferri, F. Suriano, F. Mancarella, L. Belsito, S. Solmi, A. Roncaglia, D. Narducci, G. Cerofolini

Publikováno v: 2012 EMRS Spring Meeting, Strasburg, France, 14-18 May 2012
info:cnr-pdr/source/autori:M. Ferri, F. Suriano, F. Mancarella, L. Belsito, S. Solmi, A. Roncaglia, D. Narducci, G. Cerofolini/congresso_nome:2012 EMRS Spring Meeting/congresso_luogo:Strasburg, France/congresso_data:14-18 May 2012/anno:2012/pagina_da:/pagina_a:/intervallo_pagine

A novel batch fabrication technology for silicon nanowires (NWs) with well controlled cross-section and placement is proposed, based on the use of polysilicon spacers manufactured on lithographically defined patterns. The NWs produced in this way are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1baed059e15e7a775ce08f8eb13b3081
http://hdl.handle.net/10281/43278

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Phonon scattering enhancement in Si nanolayers

Autor: D. Narducci, G. Cerofolini, M. Ferri, F. Suriano, F. Mancarella, L. Belsito, S. Solmi, A. Roncaglia

Publikováno v: 2012 EMRS Spring Meeting, Strasburg, France, 14-18 May 2012
info:cnr-pdr/source/autori:D. Narducci, G. Cerofolini, M. Ferri, F. Suriano, F. Mancarella, L. Belsito, S. Solmi, A. Roncaglia/congresso_nome:2012 EMRS Spring Meeting/congresso_luogo:Strasburg, France/congresso_data:14-18 May 2012/anno:2012/pagina_da:/pagina_a:/intervallo_pagine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::debaac9db752e5b74299cb16843dcac4
http://www.cnr.it/prodotto/i/196687

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