Výsledky vyhledávání

Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap

Publikováno v: Microelectronic Engineering. 132:218-225

New materials and device architectures will be needed to extend CMOS scaling.High mobility materials in the channel can boost the performance at scaled supply voltage.Ultimate reduction of power dissipation will require new concepts like Tunnel FET.V

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::814f5ca598ace544fe612fd9e939de89
https://doi.org/10.1016/j.mee.2014.08.005

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Record mobility (μeff ∼3100 cm2/V-s) and reliability performance (Vov∼0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer

Autor: Q. Xie, A. Vais, S. Sioncke, K. De Meyer, Laura Nyns, A. Alian, Aaron Thean, Yves Mols, Rita Rooyackers, Jacopo Franco, F. Tang, Anda Mocuta, J.W. Maes, Hao Yu, Vamsi Putcha, X. Jiang, Nadine Collaert, Dennis Lin, M. Givens

Publikováno v: 2016 IEEE Symposium on VLSI Technology.

In 0.53 Ga 0.47 As quantum-well (QW) MOSFETs with a novel interfacial layer(IL)/high-k stack on an improved interface were fabricated. Excellent device characteristics (SS∼72mV/dec, I on /I off >106 at V ds =0.5V, DIBL∼26mV/v for a device at EOT�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::15181a4d63bb13618fffc12c438c1217
https://doi.org/10.1109/vlsit.2016.7573410

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Beyond-Si materials and devices for more Moore and more than Moore applications

Publikováno v: ICICDT

In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be dis

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7804a62606acaa9ece2516ce72b3f82
https://doi.org/10.1109/icicdt.2016.7542050

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Passivation Challenges with Ge and III/V Devices

Autor: Dennis Lin, Matty Caymax, S. De-Gendt, Laura Nyns, Naoto Horiguchi, Aaron Thean, S. Sioncke, Annelies Delabie, Herbert Struyf

Publikováno v: ECS Transactions. 45:97-110

Ge and III/V materials are being investigated as high mobility channel materials for devices beyond the 14 nm technology node. These materials bring new issues to the forefront and device engineering can help solve these problems: an Implant Free Qua

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba29963ad8626c99f8c7d67936d4ca04
https://doi.org/10.1149/1.3700458

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Cleaning Challenges and Solutions for Advanced Technology Nodes

Autor: Diana Tsvetanova, Rita Vos, Steven Brems, Sophia Arnauts, Paul Mertens, Marc Heyns, Hiroaki Takahashi, Wada Masayuki, D. Cuypers, Marc Hauptmann, S. Sioncke, Nick Valckx

Publikováno v: ECS Transactions. 41:3-13

Trends in further scaled CMOS technologies are reviewed with respect to the implications for cleaning and wet processing. Particularly the FEOL processes are being considered such as selective cap removal, pre-epi cleaning and post I/I photo resist r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::46417e8765a0cc8b75ec2d36f9c575cb
https://doi.org/10.1149/1.3630820

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Investigations of the Surface Chemical Composition and Atomic Structure of ex-situ Sulfur Passivated Ge(100)

Autor: S. Sioncke, Claudia Fleischmann, Burkhard Beckhoff, André Vantomme, Matthias Mueller, Kristof Paredis, Marc Meuris, K. Schouteden, C. Van Haesendonck, Michael Kolbe, Kristiaan Temst

Publikováno v: ECS Transactions. 25:421-432

Using complementary surface analysis techniques, we have studied the chemical and structural properties of the S/Ge(100) passivation layer formed upon sulfidation in an aqueous (NH4)2S solution. Our experiments have revealed that only S-Ge bonds are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de2e35288a37c5e13e1ad17e2d95c87c
https://doi.org/10.1149/1.3204433

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Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing

Autor: D. P. Brunco, Marc Meuris, Jan Van Steenbergen, Marc Heyns, Olivier Uwamahoro, Evi Vrancken, S. Sioncke

Publikováno v: Solid State Phenomena. :203-206

The Si transistor has dominated the semiconductor industry for decades. However, to fulfill the demands of Moore’s law, the Si transistor has been pushed to its physical limits. Introducing new materials with higher intrinsic carrier mobility is on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b16d6832f01e69a1b6db7178a0613a6
https://doi.org/10.4028/www.scientific.net/ssp.145-146.203

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Capacitance-Voltage (CV) Characterization of GaAs-Oxide Interfaces

Autor: H.C. Lin, S. Sioncke, Wei-E Wang, Clement Merckling, Marc Heyns, Koen Martens, David Mercier, Matty Caymax, Christoph Adelmann, Guy Brammertz, Marc Meuris, Julien Penaud

Publikováno v: ECS Transactions. 16:507-519

We will shortly review the basic physics of charge carrier trapping and emission from trapping states within the bandgap of a semiconductor in order to show that high temperature CV-measurements are necessary for GaAs MOS characterization. The mid-ga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c66f197827424cbe863d2c64a12f08c3
https://doi.org/10.1149/1.2981632

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Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications

Autor: Marc Meuris, Matty Caymax, Laura Nyns, YG Fedorenko, L.-A. Ragnarsson, Jan Willem Maes, S. Sioncke, Sven Van Elshocht, Alexis Franquet, Dennis Lin, Florence Bellenger, Michel Houssa, Annelies Delabie, Stefan De Gendt, Thierry Conard, Johan Swerts

Publikováno v: ECS Transactions. 11:227-241

To increase CMOS device performance, new materials are introduced in the gate stack (high-k dielectrics, metal gates) and the transistor channel (Ge, III-V). In this work, we study the Atomic Layer Deposition (ALD) of hafnium based gate dielectric ox

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::caf3eba0b6411435a7e80783bf4c25ba
https://doi.org/10.1149/1.2779086

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