Výsledky vyhledávání - "S. Shur, Michael"

Plasma effects in a micromachined floating-gate high-electron-mobility

Autor: HAGIWARA, ICHIRO, Hu, Yabo, Ryzhii, Victor, Ryzhii, Maxim, S. Shur, Michael, I, Khmyrova

Publikováno v: Jpn.J.Appl. Phys.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::51fd020ac9e2a21e1d94c2e2ba4f7749
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100584619

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Reverse engineering based on computer graphics technique

Autor: HAGIWARA, ICHIRO, I, Khmyrova, Hu, Yabo, Ryzhii, Maxim, Ryzhii, Victor, S. Shur, Michael

Publikováno v: Jpn.J.Appl Phys..

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::984bbc9cc41b7b1c98da15142dddcfe6
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100584633

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Akademický článek

Electron Drift Velocity of the Two-Dimensional Electron Gas in Compound Semiconductors.

Autor: Dmitriev, Alexander, Kachorovski, Valentin, S. Shur, Michael, Stroscio, Michael

Publikováno v: International Journal of High Speed Electronics & Systems; Mar2000, Vol. 10 Issue 1, p103, 8p

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Akademický článek

From atomistic tight-binding theory to macroscale drift–diffusion: Multiscale modeling and numerical simulation of uni-polar charge transport in (In,Ga)N devices with random fluctuations.

Autor: O'Donovan, Michael, Chaudhuri, Debapriya, Streckenbach, Timo, Farrell, Patricio, Schulz, Stefan, Koprucki, Thomas

Publikováno v: Journal of Applied Physics; 8/14/2021, Vol. 130 Issue 6, p1-13, 13p

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