Zobrazeno 1 - 10
of 86
pro vyhledávání: '"S. Shue"'
Autor:
Y.H. Lin, C.C. Lee, C.Y. Liao, M.H. Lin, W. C. Tu, Robin Chen, H.P. Chen, Winston S. Shue, Min Cao
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef8d0ebc84815077adfafab74bac26a6
https://doi.org/10.1109/irps48203.2023.10117795
https://doi.org/10.1109/irps48203.2023.10117795
Akademický článek
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Autor:
H.P. Chen, Y.H. Wu, H.Y. Huang, C.H. Tsai, S.K. Lee, C.C. Lee, T.H. Wei, H.C. Yao, Y.C. Wang, C.Y. Liao, H.K. Chang, C.W. Lu, Winston S. Shue, Min Cao
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41140a01a34304bcb6f9f1861b6a0e1b
https://doi.org/10.1109/iedm19574.2021.9720600
https://doi.org/10.1109/iedm19574.2021.9720600
Autor:
Senji Shirasawa, Liangjing Wang, Lawrence R. Zukerberg, Manish Gala, Daniel S. Shue, Bo R. Rueda, Thomas R. Austin, Maria Pino, Masayoshi Yamamoto, Daniel C. Chung, Maureen P. Lynch, Hirotoshi Kikuchi
Publikováno v:
International Journal of Cancer. 134:2041-2050
The KRAS oncogene influences angiogenesis, metastasis and chemoresistance in colorectal cancers (CRCs), and these processes are all enhanced in hypoxic conditions. To define functional activities of mutant KRAS in a hypoxic microenvironment, we first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76503a9859a6b2ebabdc2e975007a346
https://doi.org/10.1002/ijc.28542
https://doi.org/10.1002/ijc.28542
Autor:
S. F. Lin, C. H. Chiu, H. S. Shue, M. L. Wang, C. C. Fan, S. Y. Chen, Ann-Kuo Chu, J. Y. Lin, T. H. Chuang
Publikováno v:
Journal of Electronic Materials. 32:492-495
Silicon oxide (SiOx) films grown by plasma-enhanced chemical-vapor deposition (PECVD) were investigated for applications in a course wavelength-division multiplexing (CWDM) network. The SiOx films were deposited on 4-in. silicon wafers based on the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5431306f38068cb9fcbbfe825795b0d0
https://doi.org/10.1007/s11664-003-0131-1
https://doi.org/10.1007/s11664-003-0131-1
Autor:
Liangjing, Wang, Manish, Gala, Masayoshi, Yamamoto, Maria S, Pino, Hirotoshi, Kikuchi, Daniel S, Shue, Senji, Shirasawa, Thomas R, Austin, Maureen P, Lynch, Bo R, Rueda, Lawrence R, Zukerberg, Daniel C, Chung
Publikováno v:
International journal of cancer. 134(9)
The KRAS oncogene influences angiogenesis, metastasis and chemoresistance in colorectal cancers (CRCs), and these processes are all enhanced in hypoxic conditions. To define functional activities of mutant KRAS in a hypoxic microenvironment, we first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::85d182d55c252b52937c311ff4deaabe
https://pubmed.ncbi.nlm.nih.gov/24519534
https://pubmed.ncbi.nlm.nih.gov/24519534
Publikováno v:
ISCAS
A new variable-rate codec for the compression of image sequences is presented. This codec is based on a two-dimensional finite-state vector quantization (2-D FSVQ), and a frame adaptive technique using codebook and address map replenishment. The resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20546aefb2abba911b55fb6e8e23bec1
https://doi.org/10.1109/iscas.1993.393647
https://doi.org/10.1109/iscas.1993.393647
Autor:
Y.S. Chen, C.S. Hou, J.J. Law, T. Yen, J. Shih, H.C. Hsieh, Y. Ku, L.C. Chao, C.H. Wang, T.C. Ong, J.Y. Cheng, S.Y. Hou, C.H. Yu, S. Shue, S.M. Jeng, M. Chiang, S.H. Chen, C.T. Lin, S.M. Jang, J.H. Chen, K.K. Young, Carlos H. Diaz, T.C. Lo, C.C. Wu, T.E. Chang, J.Y.-C. Sun, Hun-Jan Tao, L.J. Chen, S.Y. Wu, Mong-Song Liang
Publikováno v:
Scopus-Elsevier
A leading-edge 0.13 /spl mu/m CMOS technology using 193 nm lithography and Cu/low-k interconnect is described in this paper. High performance 80 nm core devices use 17 /spl Aring/ nitrided oxide for 1.0-1.2 V operation. These devices deliver unloaded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e5d4941f20b943318792195e77586ba
https://doi.org/10.1109/iedm.2000.904382
https://doi.org/10.1109/iedm.2000.904382
Autor:
M. Chiang, C.C. Wu, K.H. Lee, S. Shue, C.C. Wang, Y.C. Sun, T.E. Chang, L.J. Chen, C.H. Diaz, M. Yu, C. Yang, S.M. Jang, C. Hu, J. Shih, C. Su, C.S. Hou, C.H. Wang, B. Chen, K. Pan, B.K. Liew, M. Chang, W. Chen, P. Lu, H. Su, Hun-Jan Tao, H.C. Hsieh, S. Chang
Publikováno v:
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).
This paper describes a leading-edge 0.15 /spl mu/m CMOS logic foundry technology family. Advanced core devices using 20 /spl Aring/ oxides for 1.2-1.5 V operation (L/sub G min/=0.1 /spl mu/m) support high-performance CPU and graphics applications. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66d77d190d04b20f4abef1fee7b128d6
https://doi.org/10.1109/vlsit.2000.852803
https://doi.org/10.1109/vlsit.2000.852803
Conference
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