Zobrazeno 1 - 10
of 56
pro vyhledávání: '"S. Shanfield"'
Autor:
M Cobb, P. Saledas, W Struble, S. Shanfield, G. Jackson, M. Zaitlin, Michael G. Adlerstein, E. Tong, Robert A. Pucel
Publikováno v:
Solid-State Electronics. 38:1641-1644
A layout to minimize parasitic elements which reduce the common emitter Heterojunction Bipolar Transistor (HBT) gain and efficiency is described. Layout modifications are based upon consideration of the HBT device model that predicts better performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8194472918948e34fea8d4de213c61
https://doi.org/10.1016/0038-1101(95)00054-w
https://doi.org/10.1016/0038-1101(95)00054-w
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 41:752-759
The authors determined that RF drain current degradation is responsible for the poor power performance of wide-recessed pseudomorphic high-electron-mobility transistors (PHEMTs). A model based on surface states was proposed to explain this phenomenon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5331bc51a2fcb0ddf3eead0eee7d0e74
https://doi.org/10.1109/22.234507
https://doi.org/10.1109/22.234507
Autor:
Y. Lan, L. Aucoin, T.D. Harris, R.D. Grober, J.C.M. Hwang, D.S. Whitefield, Ce-Jun Wei, Y.A. Tkachenko, S. Shanfield, D.M. Hwang
Publikováno v:
Proceedings of 1994 IEEE GaAs IC Symposium.
Hot-electron trapping in the SiN passivation was found to be a cause for gradual degradation during RF operation of metal-semiconductor field-effect transistors. The time dependence and threshold energy for trap formation was determined by dc and ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6923f7c1c3f00d2c3a70a70291e855a
https://doi.org/10.1109/gaas.1994.636980
https://doi.org/10.1109/gaas.1994.636980
Autor:
R. Binder, P. Lyman, S. Shanfield, A. Platzker, William E. Hoke, L. Aucoin, S.L.G. Chu, M.J. Schindler
Publikováno v:
GaAs IC Symposium Technical Digest 1992.
The authors report the third-order intermodulation distortion and phase deviation of 1.2-mm periphery double pulsed doped pseudomorphic high-electron-mobility transistors (HEMTs) at high levels of power and efficiency. A device tuned for single-tone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0dbf039910c4f5322d1309c829529b9
https://doi.org/10.1109/gaas.1992.247189
https://doi.org/10.1109/gaas.1992.247189
Autor:
B.I. Patel, A. Bertrand, S. Shanfield, William E. Hoke, A. Platzker, Thomas E. Kazior, P. Lyman, L. Aucoin
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
The authors report 10- and 18-GHz power performance of double recessed 1.2-mm periphery pseudomorphic high electron mobility transistors (PsHEMTs). They have obtained demonstrably better uniformity in performance than conventionally fabricated PsHEMT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c90966e4f74e4c39a12262e94c657f
https://doi.org/10.1109/mwsym.1992.188064
https://doi.org/10.1109/mwsym.1992.188064
Autor:
Thomas E. Kazior, A. Platzker, S. Shanfield, M. Vafiades, J.C. Huang, A. Bertrand, M. Niedzwiecki, L. Aucoin, W. Boulais
Publikováno v:
15th Annual GaAs IC Symposium.
The authors study the effect of channel dimensions on the millimeter-wave power performance of a double-recessed pseudomorphic high electron mobility transistor (PHEMT). The choice of channel recess dimension, specifically the gate to drain n+ ledge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34595a10519717b613422e363c75b185
https://doi.org/10.1109/gaas.1993.394475
https://doi.org/10.1109/gaas.1993.394475
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
A first-pass, three stage monolithic GaAs pseudomorphic HEMT power amplifier has been developed for use over the 40 GHz to 45 GHz band. The MMIC amplifier delivers 500 to 725 mW at the one dB gain compression point. The associated power gain is 10 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e98e66c08e0cadd5361c5364285dddb
https://doi.org/10.1109/mwsym.1994.335507
https://doi.org/10.1109/mwsym.1994.335507
Autor:
E. Tong, M.J. Schindler, B. Cole, D. Teeter, Michael G. Adlerstein, S. Shanfield, P. Saledas, R. Wohlert, G. Jackson
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
In this paper, we present results on millimeter-wave PIN diode switch arms and phase shifters fabricated in our HBT process line. The PIN diode is formed by the base-collector junction of the HBT and is therefore completely compatible with our conven
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33451bacce00a61afd6fc4775dd0d431
https://doi.org/10.1109/mwsym.1994.335430
https://doi.org/10.1109/mwsym.1994.335430
Autor:
Y.A. Tkachenko, R.D. Grober, S. Shanfield, D.M. Hwang, T.D. Harris, Ce-Jun Wei, J.C.M. Hwang, L. Aucoin
Publikováno v:
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers.
Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9add898bb6cd93bb06befe6e863f3f18
https://doi.org/10.1109/mcs.1995.470978
https://doi.org/10.1109/mcs.1995.470978
Autor:
S. Shanfield, A. Miquelarena, A. Platzker, C. Bedard, William E. Hoke, D. Atwood, P. Saledas, P. Lyman, J. Wendler, W. Boulais, J.C. Huang, L. Aucoin
Publikováno v:
IEEE Electron Device Letters. 14:456-458
A double-recessed 0.2- mu m-gate-length pseudomorphic HEMT (PHEMT) has been demonstrated with 500 mW of output power (833 mW/mm of gate periphery), 6-dB gain, and 35% power-added efficiency (PAE) at 32 GHz. At 44 GHz, the device exhibited 494 mW of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b88ec2a2b2683af06c991027c3e6ec3
https://doi.org/10.1109/55.244708
https://doi.org/10.1109/55.244708