Zobrazeno 1 - 10
of 70
pro vyhledávání: '"S. Sh. Rekhviashvili"'
Autor:
S. Sh. Rekhviashvili
Publikováno v:
Russian Physics Journal. 65:2058-2067
Autor:
S. Sh. Rekhviashvili
Publikováno v:
Russian Microelectronics. 51:311-317
Autor:
S. Sh. Rekhviashvili, A. V. Pskhu
Publikováno v:
Technical Physics Letters. 48:35-38
Publikováno v:
Technical Physics Letters. 48:39-42
Autor:
S. Sh. Rekhviashvili, W. Strek
Publikováno v:
Optics and Spectroscopy. 130:18-22
Publikováno v:
Optics and Spectroscopy. 130:23-27
Publikováno v:
Russian Microelectronics. 50:347-352
A physical and topological model of an integrated capacitor based on a Schottky barrier is proposed and numerically implemented. It is theoretically shown that by forming a volumetric functional structure of a capacitor, it is possible to achieve a s
Autor:
S. Sh. Rekhviashvili, M. M. Bukhurova
Publikováno v:
Semiconductors. 55:621-624
Autor:
S. Sh. Rekhviashvili
Publikováno v:
Colloid Journal. 83:816-818
Publikováno v:
High Temperature. 59:179-183