Zobrazeno 1 - 10
of 19
pro vyhledávání: '"S. Sedlmaier"'
Autor:
S. Sedlmaier, H. Hajak, Gerhard Abstreiter, Werner Wegscheider, Max Bichler, P. Vogl, Gert Schedelbeck, Michael Stopa, Stefan Birner, Matthias Reinwald, Robert Schuster, Dieter Schuh, Johann Bauer
Publikováno v:
physica status solidi (c). 1:2028-2055
An overview of the cleaved edge overgrowth technique, which allows the realization of atomically precise quantum structures, is presented. We explain the origin of the formation of quantum wires, which were grown with this molecular beam epitaxy meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f93cc8ab7617d703027afab4ab3e03
https://doi.org/10.1002/pssc.200404762
https://doi.org/10.1002/pssc.200404762
Publikováno v:
IEEE Transactions on Electron Devices. 51:279-282
The realization of a novel vertically grown tunnel field-effect transistor (FET) with several interesting properties is presented. The operation of the device is shown by means of both experimental results as well as two-dimensional computer simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97adf55a74bfad654c00df8e37dc0292
https://doi.org/10.1109/ted.2003.821575
https://doi.org/10.1109/ted.2003.821575
Autor:
Wolfgang S. M. Werner, C Fink, Werner Kanert, Joerg Schulze, Walter Hansch, Ignaz Eisele, S Sedlmaier, C. Tolksdorf
Publikováno v:
Materials Science and Engineering: B. 89:439-443
One major goal in power device research is the reduction of power losses while keeping high breakdown voltages. Commonly used power devices, e.g. DMOS™, use a combination of lateral channel and vertical drift zone. This involves power losses that c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e68990c959cf3ef7d191e953a5c964
https://doi.org/10.1016/s0921-5107(01)00856-x
https://doi.org/10.1016/s0921-5107(01)00856-x
Publikováno v:
Thin Solid Films. 380:207-210
In this work we present a new approach for solving the tradeoff between breakdown capability and on state resistance for Power-MOS devices. Therefore we use a vertical transistor on an epitaxial layer. This concept allows the adjustment of the breakd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c9702cb6f63ba3c61d0cfabb4a81ef
https://doi.org/10.1016/s0040-6090(00)01506-6
https://doi.org/10.1016/s0040-6090(00)01506-6
Autor:
Ignaz Eisele, A. Ludsteck, Walter Hansch, Matthias Schmidt, S Sedlmaier, Krishna K. Bhuwalka, Joerg Schulze
Publikováno v:
Applied Physics Letters. 85:1707-1709
We present gate-controlled resonant interband tunneling on silicon ⟨111⟩. The investigated structure principally consists of a vertical, gated p-i-n diode grown by molecular beam epitaxy. We evaluated the surface tunnel current from a gate-induce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4328cb6189442934e281c083457317b2
https://doi.org/10.1063/1.1783023
https://doi.org/10.1063/1.1783023
Publikováno v:
61st Device Research Conference. Conference Digest (Cat. No.03TH8663).
In this paper, we expect higher doping concentrations to reduce the resistance of the drift zone in forward bias, on the other hand leakage current in reverse bias must be kept at a minimum and the breakdown voltage unchanged. An unintentional n-dopi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9e1a218348ce06b9460af1bba61b2c
https://doi.org/10.1109/drc.2003.1226871
https://doi.org/10.1109/drc.2003.1226871
We measure the photoluminescence spectra for an array of modulation doped, T-shaped quantum wires as a function of the one-dimensional density ne, which is modulated with a surface gate. We present self-consistent electronic structure calculations fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8b3c38219ac754b709c51ca70fa1f1e
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