Zobrazeno 1 - 10
of 53
pro vyhledávání: '"S. Schwantes"'
Publikováno v:
Aquaculture. 287:120-127
The objective of this study was to review the state of grow-out production for giant river prawns ( Macrobrachium rosenbergii ) in Thailand, assess the perceived ecological impacts of the industry, and suggest avenues by which farmers might adopt mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7558bd3615e7fb28da5db5bdb9b9135d
https://doi.org/10.1016/j.aquaculture.2008.10.017
https://doi.org/10.1016/j.aquaculture.2008.10.017
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:377-385
This paper discusses the impact of the back-gate bias on the on-state drain breakdown voltage of high-voltage silicon-on-insulator (SOI) MOSFETs. This is mandatory in order to understand the physical mechanisms behind the limitations of the safe oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1d345759c0669fc8d4264d3644d406f
https://doi.org/10.1109/tdmr.2006.883128
https://doi.org/10.1109/tdmr.2006.883128
Publikováno v:
IEEE Transactions on Electron Devices. 52:1649-1655
This paper discusses for the first time the impact of the back-gate bias on lateral DMOS (LDMOS) transistors on silicon-on-insulator (SOI) substrates. An analytical model that takes the back-gate bias and the device parameters into account is present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc94a8fca493309aa8df2e4b4c023ee8
https://doi.org/10.1109/ted.2005.850952
https://doi.org/10.1109/ted.2005.850952
Publikováno v:
International Journal of Electronics. 90:607-612
The influence of parasitic charge at the Si–SiO2 interface on the characteristics of n-channel metal oxide semiconductor field effect transistors (nMOSFETs) scaled down to a feature size of 25 nm is studied. The results are that the impact of paras
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::295cf0bdc11e4551b718192d20a3354a
https://doi.org/10.1080/00207210310001647222
https://doi.org/10.1080/00207210310001647222
Autor:
R. Steele, H. Siden, S. Cadell, B. Davies, G. Andrews, L. Feichtinger, M. Singh, S. Spicer, H. Goez, D. Davies, A. Rapoport, C. Vadeboncoeur, S. Liben, M.-C. Gregoire, S. Schwantes, S. J. Friedrichsdorf
Publikováno v:
Archives of disease in childhood. 99(8)
Background Children with progressive, non-curable genetic, metabolic, or neurological conditions require specialised care to enhance their quality of life. Prevention and relief of physical symptoms for these children needs to begin at diagnosis, yet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::042a4e2b873ad2be9d6a506d8ce55c32
https://pubmed.ncbi.nlm.nih.gov/24833792
https://pubmed.ncbi.nlm.nih.gov/24833792
Publikováno v:
Intermetallics. 2:179-184
The tensile test properties of rolled and subsequently annealed Ti48Al2Cr sheet material (composition in atomic percent) were determined at room temperature and elevated temperatures. At room temperature a plastic fracture strain of 2% was meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf76a813400a925c7575067d9137ae8
https://doi.org/10.1016/0966-9795(94)90056-6
https://doi.org/10.1016/0966-9795(94)90056-6
Publikováno v:
Practical Metallography. 30:343-356
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8293436526bf731446d48ee09114828e
https://doi.org/10.1515/pm-1993-300704
https://doi.org/10.1515/pm-1993-300704
Publikováno v:
2005 IEEE International SOI Conference Proceedings.
Smart power SOI technologies are becoming popular because of better isolation. The SOI technology introduces a new electrode, the substrate electrode referred to as back gate. Several papers have reported back gate induced leakage current. This work
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::951cd3a90e38184a42de5e9f90dfaf40
https://doi.org/10.1109/soi.2005.1563524
https://doi.org/10.1109/soi.2005.1563524
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..
This paper presents a device structure for smart power SOI technologies. It is shown that the breakdown voltage BVDS and the safe operation area (SOA) of lateral p-channel DMOS transistors can be improved without degrading the on-resistance by locall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac73b8054573e30117b369aefa9d4b60
https://doi.org/10.1109/essder.2005.1546629
https://doi.org/10.1109/essder.2005.1546629