Zobrazeno 1 - 10
of 69
pro vyhledávání: '"S. Schlipf"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:348-355
Advanced indentation techniques have been introduced to study the effects of multiple stresses on the transistor characteristics with using a cylindrical tip with various alignments. Particularly, controlling the cylinder tip orientation relative to
Autor:
S. Schlipf, Ehrenfried Zschech, André Clausner, Jens Paul, Laura Wambera, Karsten Meier, Simone Capecchi
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:9-16
The strain impact on integrated circuit performance is investigated by applying a novel indentation technique. The approach aims to investigate stress caused by CPI, particularly highly localized stress/strain with respect to the actual device geomet
Publikováno v:
2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Publikováno v:
2021 IEEE International Integrated Reliability Workshop (IIRW).
Autor:
Laura Wambera, Ehrenfried Zschech, Karsten Meier, André Clausner, Jens Paul, Simone Capecchi, S. Schlipf, C. Sander
Publikováno v:
2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
The stress related shifts of transistors are measured by precise stress application with a newly designed in-situ four-point bending (4PB) system. A test board including a flip chip packaged test vehicle is loaded with uniaxial stress. The test vehic
Autor:
S. Schlipf, Ehrenfried Zschech, Karsten Meier, Laura Wambera, Simone Capecchi, André Clausner, Jens Paul
The stress-related change in the characteristics of transistors manufactured in the 22 nm fully depleted silicon on insulator (FDSOI) CMOS technology node is studied with advanced experimental indentation setups. Precisely, NAND and NOR ring oscillat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0336c0a8546dcc445ba70b1f1c13644c
https://publica.fraunhofer.de/handle/publica/266391
https://publica.fraunhofer.de/handle/publica/266391
Autor:
André Clausner, Jens Paul, S. Schlipf, Laura Wambera, Karsten Meier, Simone Capecchi, Ehrenfried Zschech
Publikováno v:
IRPS
The impact of strain, induced by nanoindentation, on integrated circuit performance is measured. Localized strain caused by chip- package interaction alters the charge carrier mobility in the transistor channel due to the piezoresistive effect. Instr
Publikováno v:
2019 IEEE International Integrated Reliability Workshop (IIRW).
A novel nanoindentation technique is used to investigate the influence of mechanical strain on integrated circuit performance. The approach aims to investigate localized stress fields caused by Chip-package interaction and resulting reversible transi
Autor:
S. Schlipf, G. Kurz, A. Aal, Ehrenfried Zschech, Roland Jancke, Martin Gall, André Clausner, Jens Paul, J. Warmuth, Andre Lange, K.-U. Giering, M. Otto
Publikováno v:
ESSDERC
On the example of a 28nm SRAM array, this work presents a novel reliability study which takes into account the effect of externally applied mechanical stress in circuit simulations. This method is able to predict the bit failures caused by the stress
Autor:
Alexander N.R. Weber, Susanne M. Benseler, Xiao Liu, J. B. Kuemmerle-Deschner, Sandra Hansmann, S. Schlipf, K. Hoertnagel, A. Hospach
Publikováno v:
Saturday, 16 JUNE 2018.
Background Deficiency of the interleukin-1 receptor antagonist (DIRA) is an autoinflammatory disease characterised by severe systemic inflammation with bone and skin involvement present in the first days of life. Objectives We report a novel variant