Zobrazeno 1 - 10
of 40
pro vyhledávání: '"S. Salaun"'
Autor:
T. Villeneuve, C. Hermant, G. Plat, A. Le Borgne, M. Murris, V. Héluain, M. Colombat, M. Courtade-Saïdi, S. Collot, S. Salaun, G. Guibert
Publikováno v:
Revue des Maladies Respiratoires Actualités. 15:19-20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d381767dc1e41255175fa640462e876
https://doi.org/10.1016/j.rmra.2022.11.033
https://doi.org/10.1016/j.rmra.2022.11.033
Publikováno v:
Solid-State Electronics. 40:615-619
Several samples with InAs deposit from 1.2 to 4 monolayers (ML) have been grown on InP(001) by gas source molecular beam epitaxy and examined by photoluminescence, transmission electron microscopy and Raman spectroscopy. Coherent InAs islands due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae8ef3b0b5d0c28fea74c71b15a16ff
https://doi.org/10.1016/0038-1101(95)00374-6
https://doi.org/10.1016/0038-1101(95)00374-6
Publikováno v:
Microelectronics Journal. 26:783-788
Tensile GaInAs layers grown by MBE on InP(001) with lattice mismatch of −0.5% to −1.7% have been examined by transmission electron mictoscopy (TEM). Elastic relaxation occurs by drastic thickness modulations which are built first on (114) and (11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae5a9fa37fd56fc33bec2ccd005e845
https://doi.org/10.1016/0026-2692(95)00037-2
https://doi.org/10.1016/0026-2692(95)00037-2
Publikováno v:
Journal of Crystal Growth. 153:71-80
Tensile/compressive and tensile/lattice matched Ga1 − xInxAs multilayers have been grown by gas source molecular beam epitaxy (GS-MBE) on InP(001) and examined by transmission electron microscopy (TEM). The tensile layers exhibit undulations parall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6db182b43c83a6cead4aa6cc898cea
https://doi.org/10.1016/0022-0248(95)00140-9
https://doi.org/10.1016/0022-0248(95)00140-9
Publikováno v:
Materials Science and Engineering: B. 31:293-297
Optimization of the growth conditions of strained-layer superlattices for polarization-insensitive semiconductor optical amplifiers is reported. The quality of the structure is assessed by transmission electron microscopy studies. Polarized room temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fe2bc0c25b4dc9ccc61cdb39874d3eb
https://doi.org/10.1016/0921-5107(94)01139-7
https://doi.org/10.1016/0921-5107(94)01139-7
Publikováno v:
Materials Science and Engineering: B. 20:82-87
Iron-doped indium phosphide layers were grown by gas source molecular beam epitaxy with a high purity solid iron source. The iron concentration varied from some 10 16 cm −3 to a few 10 19 cm −3 . N-i-n or n + -i-n + layer structures were realized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd03fb30a8312109893b9de91800643
https://doi.org/10.1016/0921-5107(93)90402-9
https://doi.org/10.1016/0921-5107(93)90402-9
Publikováno v:
Journal of Crystal Growth. 120:353-356
We present results on a study of strained In 0.82 Ga 0.18 As/InP quantum wells (QWs) grown by gas source MBE. From transmission electron microscopy, we find that the onset of dislocation creation occurs for thickness around 60 A. Strain release is fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e50b63541ca1b3cfcea9ae793ef99f22
https://doi.org/10.1016/0022-0248(92)90417-h
https://doi.org/10.1016/0022-0248(92)90417-h
Publikováno v:
Applied Physics Letters. 69:943-945
Raman scattering has been used to investigate strained InAs islands grown on InP(001), in correlation with transmission electron microscopy. Symmetry arguments, selective resonance at the InAs E1‐like transition and comparison with a single‐quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fe64bbee272c9bf0baf014517599eef
https://doi.org/10.1063/1.116951
https://doi.org/10.1063/1.116951
Autor:
J. Pleumeekers, C.J.S. de Matos, S. Salaun, A. Le Corre, Stephane Gosselin, Bertrand Lambert, H. L’Haridon
Publikováno v:
Applied Physics Letters. 68:3576-3578
We demonstrate the performance of a semiconductor photorefractive p‐i‐n diode operating at 1.55 μm in the longitudinal quantum‐confined Stark geometry. The device structure consists of a semi‐insulating InP–GaInAs(P) multiple quantum well,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e2cfe73c39da30b8445c0ad05fc6237
https://doi.org/10.1063/1.116642
https://doi.org/10.1063/1.116642
Autor:
A. Le Corre, L. Henry, Fabrice Clérot, S. Salaun, A. Godefroy, J.C. Keromnes, P. Lamouler, Jean-Claude Simon, Slimane Loualiche, G. Joulie, Claude Vaudry
Publikováno v:
IEEE Photonics Technology Letters. 7:473-475
A polarization insensitive (sensitivity < 1 dB) semi- conductor optical amplifier has been realized at 1.55 pm. The active layer consists of a strain-balanced superlattice structure. Gain polarization insensitivity on a large bandwidth (60 nm) togeth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::986a14b8a2adb9d287b6316ec6a995ba
https://doi.org/10.1109/68.384514
https://doi.org/10.1109/68.384514