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Contributors

Autor: I.N. Antonov, A.I. Belov, C. Bonafos, S. Brivio, Laurent Cario, M. Carrada, Brigitte Caussat, Georgios Ch. Sirakoulis, Dennis Valbjørn Christensen, Elena Cianci, Benoit Corraze, V.A. Demin, P. Dimitrakis, A.V. Emelyanov, Manuel Escudero, Vincenzo Esposito, D.O. Filatov, Georgios Giannopoulos, O.N. Gorshkov, F. Gourbilleau, E.G. Gryaznov, D.V. Guseinov, Michael Hoffmann, Etienne Janod, Andreas Kaidatzis, L. Khomenkhova, D.S. Korolev, M.N. Koryazhkina, Yang Li, Qi Liu, Benjamin Max, A.N. Mikhaylov, Thomas Mikolajick, Halid Mulaosmanovic, Dimitris Niarchos, K.E. Nikiruy, P. Normand, E.V. Okulich, V.I. Okulich, D.A. Pavlov, Nini Pryds, Krishnaswamy Ramkumar, Antonio Rubio, V.V. Rylkov, Simone Sanna, S. Schamm-Chardon, Uwe Schroeder, M.E. Shenina, R.A. Shuisky, K.V. Sidorenko, A. Slaoui, Stefan Slesazeck, B. Spagnolo, Sabina Spiga, E. Talbot, Stefan Tappertzhofen, D.I. Tetelbaum, S.V. Tikhov, Julien Tranchant, Constantin Vahlas, E. Vianello, Ioannis Vourkas, Xiaolong Zhao

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c6c5caf76373ac55685791efd20e3e43
https://doi.org/10.1016/b978-0-12-814629-3.09989-x

Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics

Autor: S. Schamm-Chardon, Pierre-Eugène Coulon, S. Baldovino, Marco Fanciulli, Luca Lamagna, Claudia Wiemer

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.419-422. ⟨10.1016/j.mee.2010.10.012⟩
Microelectronic Engineering, 2011, 88 (4), pp.419-422. ⟨10.1016/j.mee.2010.10.012⟩
Microelectronic engineering 88 (2011): 419–422.
info:cnr-pdr/source/autori:Schamm-Chardon S, Coulon PE, Lamagna L, Wiemer C, Baldovino S, Fanciulli M/titolo:Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics/doi:/rivista:Microelectronic engineering/anno:2011/pagina_da:419/pagina_a:422/intervallo_pagine:419–422/volume:88

Aberration corrected transmission electron microscopy and electron spectroscopy are combined with electrical measurements for the quantitative description of the structural, chemical and dielectric parameters of rare earth/transition metal oxides thi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97d037490c10db0f411cf84efdb1efec
https://doi.org/10.1016/j.mee.2010.10.012

Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications

Autor: A. Mouti, Bernd Schmidt, Pascal Normand, S. Schamm, G. Ben Assayag, V. Ioannou-Sougleridis, Panagiotis Dimitrakis, Caroline Bonafos, Jill Becker

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1838-1841. 〈10.1016/j.mee.2009.03.074〉
Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1838-1841. ⟨10.1016/j.mee.2009.03.074⟩
Microelectronic Engineering, 2009, 86 (7-9), pp.1838-1841. ⟨10.1016/j.mee.2009.03.074⟩

International audience; Structural and electrical properties of ALD-grown 5 and 7 nm-thick Al2O3 layers before and after implantation of Ge ions (1 keV, 0.5–1 × 1016 cm−2) and thermal annealing at temperatures in the 700–1050 °C range are rep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5f7151cad324770ba6a6451fb5c6500
https://doi.org/10.1016/j.mee.2009.03.074

ALD-Grown Rare Earth Oxides for Advanced Gate Stacks

Autor: Luca Lamagna, L. H. Lu, Dimitra Tsoutsou, S. Schamm, Pierre-Eugène Coulon, Giovanna Scarel, Marco Fanciulli, Shu Miao, Stelios N. Volkos, Claudia Wiemer

Publikováno v: ECS Transactions. 13:77-88

Atomic Layer Deposition (ALD) has gained increasing attention for the sub-nm growth of high permittivity (k) rare earth oxide films. State of the art device operation heavily depends on the oxide/semiconductor interface properties. In this work, we a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe238e6dbb23607e7af39b5095ef1c47
https://doi.org/10.1149/1.2911487