Zobrazeno 1 - 10
of 41
pro vyhledávání: '"S. S. Tsao"'
Publikováno v:
Scopus-Elsevier
This paper examines how dopant profile and anodization conditions affect the formation of buried porous silicon layers in n{sup {minus}}/n{sup +}/n{sup {minus}} doped wafers. Wafers with peak n{sup +} donor concentration {le}10{sup 18}/cm{sup 3} exhi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a7a9fe9c93a0c0f784a1ac0df9eb634
https://doi.org/10.1149/1.2085864
https://doi.org/10.1149/1.2085864
Publikováno v:
Journal of Fusion Energy. 9:371-375
Electrochemical cells constructed with a thin Pd or Ti foil electrode mounted at one wall of the cell have been used both to test for the existence of “cold fusion” and to measure directly D∶Pd loading ratios in an operating cell. The first typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f1b3e57746514d8a8b3c307a8fb042
https://doi.org/10.1007/bf01588265
https://doi.org/10.1007/bf01588265
Autor:
D. Ingersoll, S. S. Tsao, William H. Casey, T. R. Guilinger, T. M. Christensen, J. A. Knapp, M. J. Kelly, Ronald I. Ewing, J. R. Scully
Publikováno v:
Journal of Fusion Energy. 9:299-304
We describe several electrochemical methods used to investigate the possibility of cold fusion phenomena in palladium and titanium tritide cathodes. We performed long-term (up to 77 days) electrolysis experiments with electrochemical cells of the Uni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::360ba0ea38670aae7f762c8eb6aad831
https://doi.org/10.1007/bf01059246
https://doi.org/10.1007/bf01059246
Publikováno v:
Journal of Applied Physics. 67:3842-3847
Porous silicon and its oxide can be converted into porous silicon oxynitrides by ammonia heat treatment. For example, ammonia treatment at 1000 °C for 1 h following 850 °C, 30‐min steam oxidation of porous silicon can result in up to 40 at. % nit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f87a79621c81dc5aedecd3b22469029e
https://doi.org/10.1063/1.346077
https://doi.org/10.1063/1.346077
Publikováno v:
IEEE SOS/SOI Technology Conference.
Summary form only given. An electrochemical method for the identification of defects and metal contamination in silicon wafers is discussed. This method is particularly suited for defect delineation in wafers synthesized for SOI. The procedure is app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be006b55aa8810cde415af7b49218d5
https://doi.org/10.1109/soi.1989.69782
https://doi.org/10.1109/soi.1989.69782
Publikováno v:
IEEE SOS/SOI Technology Conference.
Summary form only given. Three aspects of porous silicon (PS) formation that could affect its compatibility with VLSI manufacturing processes are evaluated: (1) chemical contamination, (2) particulate contamination, and (3) PS uniformity. Porous sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac357f9f411e9280e3a2e8d8f6c7e56b
https://doi.org/10.1109/soi.1989.69768
https://doi.org/10.1109/soi.1989.69768
Publikováno v:
Proceedings. SOS/SOI Technology Workshop.
The authors have examined in detail the electrochemistry of both n- and p-type single-crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08eb7791a17ca040c9873a93a6579e7d
https://doi.org/10.1109/soi.1988.95393
https://doi.org/10.1109/soi.1988.95393
Autor:
Stephen A. Casalnuovo, Seethambal S. Mani, David M. Follstaedt, T. R. Guilinger, S. S. Tsao, Stephen R. Lee, Christine C. Mitchell, James G. Fleming, Jung Han, William R. Wampler, M. J. Kelly, Karen Nmn Waldrip
This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad00d8586ce933bb0312b438754da266
https://doi.org/10.2172/780286
https://doi.org/10.2172/780286
Publikováno v:
Applied Physics Letters. 59:2088-2090
Ion irradiation was used to pattern a region of red‐light emitting porous silicon by eliminating visible‐light photoluminescence (PL). The PL peak wavelength is approximately 735 nm and shows little dependence on the excitation‐light wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f57998f7664b150251f65640fc07091
https://doi.org/10.1063/1.106141
https://doi.org/10.1063/1.106141
Publikováno v:
IEEE Transactions on Nuclear Science. 35:1361-1367
The top-gate, back-gate, and sidewall responses of SIMOX and ZMR SOI/MOS transistors to 10-keV X-ray and Co-60 irradiation are compared. For top-gate and sidewall insulators, Co-60 and 10-keV X-ray irradiations at matched dose rates lead to nearly id
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1cbe53f8dc8b606cac516e3e7896ca
https://doi.org/10.1109/23.25465
https://doi.org/10.1109/23.25465