Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. S. Strelchenko"'
Autor:
V. B. Shmagin, A. V. Murel, E. A. Surovegina, V. L. Krukov, V. I. Shashkin, S. S. Strelchenko
Publikováno v:
Semiconductors. 51:1485-1489
Three deep acceptor levels with activation energies of ~0.7, ~0.41, and ~0.16 eV are found in GaAs structures, which have the hole type of conductivity and are grown by liquid-phase epitaxy, by the methods of capacitance spectroscopy (admittance spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73198423fec29b0a8f25b51621295fcf
https://doi.org/10.1134/s1063782617110197
https://doi.org/10.1134/s1063782617110197
Publikováno v:
Semiconductors. 43:135-138
In the approximation of strictly regular solutions, the concentration range for spinodal decomposition of ZnO-BeO alloys is calculated both disregarding and taking into account the crystal-lattice stresses. The obtained data are compared to the avail
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d82feb4e973e7a01d8dfb70f2beb3d6
https://doi.org/10.1134/s1063782609020018
https://doi.org/10.1134/s1063782609020018