Zobrazeno 1 - 10
of 78
pro vyhledávání: '"S. S. Simeonov"'
Autor:
E Kafedjiiska, S S Simeonov
Publikováno v:
Semiconductor Science and Technology. 12:1016-1027
I - V forward current characteristics of Si Schottky diodes are measured in the 80 - 291 K temperature range. The apparent decrease of the electron barrier height at the metal - semiconductor (M - S) interface, , and the increase of the ideality fact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::707a8ad2f5e546cd7d9745564529301f
https://doi.org/10.1088/0268-1242/12/8/015
https://doi.org/10.1088/0268-1242/12/8/015
Publikováno v:
physica status solidi (a). 122:K147-K150
Les niveaux profonds aux complexes de lacunes donneuses sont des centres de generation-recombinaison. L'influence observee du bombardement des substrats de Si, avec des ions Ar de 1 keV, s'explique par la generation de tels niveaux profonds dans les
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95425169e5f8efa2d4a6d3c1bce1076b
https://doi.org/10.1002/pssa.2211220253
https://doi.org/10.1002/pssa.2211220253
Autor:
S. S. Simeonov
Publikováno v:
Physical Review B. 36:9171-9181
An expression for the current across the space-charge layer at a semiconductor grain boundary is obtained. It is shown that this current is determined by combined diffusion and drift of the majority carriers across this space-charge layer and emissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56823fe7386edf2da72f746fcad149d4
https://doi.org/10.1103/physrevb.36.9171
https://doi.org/10.1103/physrevb.36.9171
Publikováno v:
International Journal of Electronics. 48:511-517
Molybdenum layers are deposited on GaAs by MoCl6 reaction with H2. During the deposition the GaAs substrates are heated to 400°C. The forward current of prepared Mo-(n)GaAs structure increases over five decades in accordance with the relation J=J0 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb4a163fd1d8d37ff7c24403feb3e4c5
https://doi.org/10.1080/00207218008901133
https://doi.org/10.1080/00207218008901133
Autor:
M. D. Ivanovich, S. S. Simeonov
Publikováno v:
Physica Status Solidi (a). 82:275-284
The recombination currents in the space charge layer of abrupt pn junctions, calculated by computer, for different doping levels and different position of recombination levels in the semiconductor energy gap, are presented. The movement of the point
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d86aadfc6e9dd9aa8789a5930a54338d
https://doi.org/10.1002/pssa.2210820135
https://doi.org/10.1002/pssa.2210820135
Autor:
S. S. Simeonov, M. D. Ivanovitch
Publikováno v:
Physica Status Solidi (a). 80:79-84
The position of the electron quasi-Fermi level at the metal–semiconductor boundary in the semiconductor space charge layer is determined in the case when the diffusion theory of electron transport is appropriate and when the electron mobility in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::918985cb3adf3fae7bf3acd41bf26903
https://doi.org/10.1002/pssa.2210800107
https://doi.org/10.1002/pssa.2210800107
Publikováno v:
Physica Status Solidi (a). 45:671-675
Tungsten is deposited on GaAs by WCl6 reaction with H2. The GaAs substrate is heated to 400 °C during the deposition. The forward current of W-n-GaAs structures prepared in such way increases exponentially over five decades in accordance with the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c14ffda6396b72018702f8bdd83f73c2
https://doi.org/10.1002/pssa.2210450241
https://doi.org/10.1002/pssa.2210450241
Publikováno v:
Akusherstvo i ginekologiia [Akush Ginekol (Sofiia)] 2006; Vol. 45 (1), pp. 48-51.
Publikováno v:
Akusherstvo i ginekologiia [Akush Ginekol (Sofiia)] 2001; Vol. 40 (3), pp. 25-7.