Zobrazeno 1 - 10
of 85
pro vyhledávání: '"S. S. Ruvimov"'
Autor:
S. S. Ruvimov, P. S. Kop’ev, G. P. Yablonskii, M. V. Rakhlin, M. V. Baidakova, Sergei Ivanov, I. V. Sedova, Evgenii V. Lutsenko, S. V. Sorokin, E. V. Zhdanova, M. M. Zverev, Sergei Gronin, N. A. Gamov, A. G. Vainilovich
Publikováno v:
Semiconductors. 49:331-336
The paper presents basic approaches in designing and growing by molecular beam epitaxy of (Zn,Mg)(S,Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets or ZnCdSe quantum wells (QW). The method of calculation of compensating sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ec2644b36931eb17b23aadca3b95fa
https://doi.org/10.1134/s1063782615030215
https://doi.org/10.1134/s1063782615030215
Publikováno v:
Technical Physics Letters. 32:1079-1082
It is shown that effective diagnostics of strongly doped Czochralski-grown silicon single crystals in the initial (as-grown) state is provided by methods based on the interference phenomena of dynamic x-ray diffraction: the Lang section topography an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c634992b81d7174beee0218d348b0c34
https://doi.org/10.1134/s106378500612025x
https://doi.org/10.1134/s106378500612025x
Autor:
G. N. Mosina, L. M. Sorokin, J Kearns, S S Ruvimov, R. N. Kyutt, I. L. Shulpina, M. P. Scheglov, V. V. Ratnikov, V Todt
Publikováno v:
Journal of Physics D: Applied Physics. 38:A111-A116
A combination of x-ray diffraction methods and electron microscopy was used for the structural study of Czochralski silicon crystals highly doped by As. For as-grown crystals a weak strain field and probable clustering of As-impurity atoms follow fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e872edfd7ec325cffb8c43671bbbb3b
https://doi.org/10.1088/0022-3727/38/10a/021
https://doi.org/10.1088/0022-3727/38/10a/021
Autor:
Joachim Krüger, S. S. Ruvimov, Henrik Siegle, Yihwan Kim, Sudhir G. Subramanya, Piotr Perlin, Zuzanna Liliental-Weber, Eicke R. Weber
Publikováno v:
Journal of Applied Physics. 88:6032-6036
The influence of the composition of the low-temperature GaN buffer layer on the structural, electrical, and optical properties of the subsequently grown GaN epilayer by molecular-beam epitaxy is investigated. It is found that decreasing the N/Ga flux
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6faacc003559ef238115f64fa3ec0676
https://doi.org/10.1063/1.1319162
https://doi.org/10.1063/1.1319162
Autor:
Eicke R. Weber, S. S. Ruvimov, Jack Washburn, Y. Nabetani, A. Sasaki, Zuzanna Liliental-Weber
Publikováno v:
Thin Solid Films. 367:277-280
In Stranski–Krastanov mode, the transition from two-dimensional growth to three-dimensional growth occurs at a certain thickness: a transition thickness. In subsequent growth, misfit dislocations are incorporated at the interface between the substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a4b6683c4e5daa71c0171a872f2ea2c
https://doi.org/10.1016/s0040-6090(00)00688-x
https://doi.org/10.1016/s0040-6090(00)00688-x
Publikováno v:
Journal of Applied Physics. 85:7909-7913
The chemical, morphological, and structural characteristics of nitrogen plasma treated c-plane sapphire substrate surfaces were studied by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and transmission electron microscopy (TE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d42f7c70f9cfa7aacb2b457a8f3c039c
https://doi.org/10.1063/1.370606
https://doi.org/10.1063/1.370606
Publikováno v:
Physical Review B. 58:R4262-R4265
Interfacial compositional disordering in InGaAs/GaAs quantom dots has been used to tune their intersublevel energy spaceings (delta E subscript [(i + 1) - i]).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a749910aa8e612fcf3bb3aa1c566664
https://doi.org/10.1103/physrevb.58.r4262
https://doi.org/10.1103/physrevb.58.r4262
Autor:
Peter Werner, S. S. Ruvimov, Marius Grundmann, A. O. Kosogov, Frank Heinrichsdorff, N. Kirstaedter, Zh. I. Alferov, P. S. Kop’ev, Dieter Bimberg, V. M. Ustinov, Nikolai N. Ledentsov, Alois Krost
Publikováno v:
Thin Solid Films. 318:83-87
Recent progress in the epitaxy (molecular beam epitaxy and metal-organic chemical vapor deposition) of strained heterostructures and the use of the Stranski-Krastanow growth mode allows to create spontaneously ordered, defect-free and dense arrays of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19c6fa29062b8f91f6ca72c4eff2a6a0
https://doi.org/10.1016/s0040-6090(97)01144-9
https://doi.org/10.1016/s0040-6090(97)01144-9
Autor:
Dieter Bimberg, S. S. Ruvimov, P. S. Kop’ev, Fariba Hatami, Peter Werner, V. M. Ustinov, J. Böhrer, Frank Heinrichsdorff, Marius Grundmann, N. N. Ledentsov, Zh. I. Alferov, R. Heitz
Publikováno v:
Physical Review B. 57:4635-4641
The optical properties and dynamics of charge carriers in self-organized arrays of type-II (staggered band lineup) GaSb/GaAs quantum dots are studied. Interband absorption from type-II quantum dots is evidenced; the energetic positions of quantum dot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88840670151560c7ed2d0cb232a3324f
https://doi.org/10.1103/physrevb.57.4635
https://doi.org/10.1103/physrevb.57.4635
Publikováno v:
Materials Science Forum. :1659-1664
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08519621cb5e34d57d5134bd7b76b020
https://doi.org/10.4028/www.scientific.net/msf.258-263.1659
https://doi.org/10.4028/www.scientific.net/msf.258-263.1659