Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. S. Paak"'
Autor:
K.-M. Chung, Ju-Heon Kim, Byeong-Hee Kim, J-H Lee, H.-K. Kang, Youngwoo Cho, J. H. Hwang, Eung-joon Lee, Sang-Don Nam, Sung-yup Jung, Kwang-Myeon Park, J.W. Hwang, B. U. Yoon, Sang Hoon Ahn, Seungwook Choi, Rak-Hwan Kim, S. S. Paak, Jong-min Baek, S. Y. Yoo, E. S. Jung, S. H. Park, T.-J. Yim, Jang-ho Kim, Han-mei Choi, J.-H. Ku, T. Oszinda, J. Chang, Nae-In Lee, I S. Kim
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
CVD-Ru based reflow Cu scheme demonstrates robust gap fill performance at 10nm and 7nm node equivalent patterns. Potential EM and TDDB reliability concerns associated with Ru CMP are identified and successfully addressed by the application of new pro
Autor:
Deok-Hyung Lee, Rak-Hwan Kim, S.Y. Yoo, Jeonghyun Baek, Jung-A Choi, K.-M. Chung, E. S. Jung, Il-Goo Kim, Ki-Yeol Park, Soon-Moon Jung, Soomin Ahn, Byung-ki Kim, J.H. Hwang, Jihoon Cha, JiYeon Ku, Eun-hong Lee, S. S. Paak, Y. W. Cho, Min-Sang Kim, D. Park, J.S. Yoon, Jae-Hak Kim, T. Matsuda, Hyoji Choi, Hye-Lan Lee, Sungho Park, Jisu Kim, B. U. Yoon, H. K. Kang, Sang-Don Nam, Jun-Bum Lee, Nae-In Lee
Publikováno v:
Publons
CVD-Ru represents a critically important class of materials for BEOL interconnects that provides Cu reflow capability. The results reported here include superior gap-fill performance, a solution for plausible integration issues, and robust EM / TDDB