Zobrazeno 1 - 10
of 22
pro vyhledávání: '"S. S. Murzin"'
Publikováno v:
JETP Letters. 86:139-143
In the fractional quantum Hall effect regime, the diagonal (ρxx) and Hall (ρxy) magnetoresistivity tensor components of the two-dimensional electron system (2DES) in gated GaAs/AlxGa1−xAs heterojunctions are measured together with the capacitance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0923812c336423ff643520b5ce340654
https://doi.org/10.1134/s0021364007140159
https://doi.org/10.1134/s0021364007140159
Publikováno v:
Physical Review B. 62:16645-16652
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::971c46f87ccf011e3444b9cf793984b3
https://doi.org/10.1103/physrevb.62.16645
https://doi.org/10.1103/physrevb.62.16645
Autor:
S. S. Murzin
Publikováno v:
JETP Letters. 89:298-300
It has been pointed out that, according to the two-parameter scaling theory, the magnetic-field position of the phases of the integer quantum Hall effect (IQHE) at ωcτ ≲ 1 is not determined by the filling factor ν = nh/eB. The position of the IQ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808ba53873e4b21ae088f11f5c2b02f9
https://doi.org/10.1134/s0021364009060083
https://doi.org/10.1134/s0021364009060083
Autor:
Isabelle Claus, Karl Eberl, S. S. Murzin, Nicolai N.T. Moshegov, Aloysius G. M. Jansen, Aleksandr I. Toropov
Publikováno v:
Physical Review B. 59:7330-7333
It is shown that the observed quantum Hall effect in epitaxial layers of heavily doped n-type GaAs with thickness $(50\ensuremath{-}140\mathrm{nm})$ larger the mean free path of the conduction electrons $(15--30 \mathrm{nm})$ and, therefore, with a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28efdf664ed47f4d8ec92d64f36a15ad
https://doi.org/10.1103/physrevb.59.7330
https://doi.org/10.1103/physrevb.59.7330
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 68:327-331
The quantum Hall effect structure in the transverse magnetoresistance Rxx and the Hall resistance Rxy of heavily doped GaAs layers with a three-dimensional spectrum of the charge carriers is investigated for different field orientations. The characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c313cb2c95c0c493c620d08b94fa8dd5
https://doi.org/10.1134/1.567868
https://doi.org/10.1134/1.567868
Publikováno v:
Physical Review Letters. 80:2681-2684
Quantization of the Hall conductance is observed in epitaxial layers of heavily doped $n$-type GaAs with thickness $(\ensuremath{\approx}100\mathrm{nm})$ larger than both the screening length and the mean free path of the conduction electrons. Theref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf634dd52a74c57923a6c8469d02be05
https://doi.org/10.1103/physrevlett.80.2681
https://doi.org/10.1103/physrevlett.80.2681
Autor:
S. S. Murzin
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 67:216-221
The conductance of doped n-GaAs films is studied experimentally as a function of magnetic field and temperature in strong magnetic fields right up to the quantum limit (ħωc = E F). The Hall conductance G xy is virtually independent of temperature T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0b64b8589d40151f11e1a09cc76d58
https://doi.org/10.1134/1.567653
https://doi.org/10.1134/1.567653
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 67:113-119
The temperature dependences of the zero-magnetic-field resistivity ρ and magnetoresistance of the 2D hole gas in GaAs/(AlGa)As heterostructures are investigated in the temperature interval 0.4–4.2 K. As the temperature T is increased, (i) the resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1514d7cf58a22cd373566a007ce82b1
https://doi.org/10.1134/1.567643
https://doi.org/10.1134/1.567643
Publikováno v:
Journal of Physics: Condensed Matter. 6:4289-4296
Magneto-quantum oscillations of the Hall constant have been observed in metallically doped three-dimensional semiconductors in a magnetic field far below the magnetic-field-induced metal-insulator (MI) transition. Especially around the magnetic field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b6cef7c418ce1592236088f7f277b3a
https://doi.org/10.1088/0953-8984/6/23/008
https://doi.org/10.1088/0953-8984/6/23/008
Autor:
S. S. Murzin
It is shown that the statements about the observation of the transitions between the insulating phase and the integer quantum Hall effect phases with the quantized Hall conductivity $\sigma_{xy}^{q}$ $\geq 3e^{2}/h$ made in a number of works are unju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42811fc1174ec6137248bcfd4a913c1f
http://arxiv.org/abs/1004.0787
http://arxiv.org/abs/1004.0787
