Zobrazeno 1 - 10
of 49
pro vyhledávání: '"S. S. Laderman"'
Autor:
Ayako Shimazaki, K. Miyazaki, S. S. Laderman, D. C. Wherry, Michael C. Madden, A. Fischer-Colbrie, Jeffrey B. Kortright, Sean Brennan, Piero Pianetta, N. Takaura, W. Tompkins
Publikováno v:
Review of Scientific Instruments. 66:1293-1297
Trace impurity analysis is essential for the development of competitive silicon circuit technologies. Current best methods for chemically identifying and quantifying surface and near‐surface impurities include grazing incidence x‐ray fluorescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3468945ab5285b4c9abfde7d155d4ef4
https://doi.org/10.1063/1.1145957
https://doi.org/10.1063/1.1145957
Autor:
D. C. Wherry, A. Fischer-Colbrie, Piero Pianetta, W. Tompkins, S. S. Laderman, Jeffrey B. Kortright, Sean Brennan, N. Takaura, Michael C. Madden
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 347:417-421
Measurement and control of surface and near surface trace impurities on silicon wafers is a critical technology for the development and manufacture of leading-edge silicon VLSI circuits. Among the industry-standard methods for monitoring surface impu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e454d775ef6cf9fff0506c5b071696c
https://doi.org/10.1016/0168-9002(94)91920-8
https://doi.org/10.1016/0168-9002(94)91920-8
Autor:
Horng-Sen Fu, D. Pettengill, Theodore I. Kamins, Dietrich Werner Vook, P. K. Yu, G. Burton, S. S. Laderman, P. Vande Voorde, J. E. Turner, A. Wang, J. Lin, H.-H. Wang, S. J. Rosner, R.W. Coen
Publikováno v:
IEEE Transactions on Electron Devices. 41:1013-1018
Self-aligned SiGe/Si bipolar transistors have been fabricated using a single-polysilicon, double-diffused process with the base in a graded SiGe layer to improve base transit time. To remain compatible with homojunction bipolar technology, undoped Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37570138d3798c760e1c0a7551166f02
https://doi.org/10.1109/16.293315
https://doi.org/10.1109/16.293315
Publikováno v:
Journal of Applied Physics. 71:150-157
The pairing of solute atoms in solution‐hardened binary and ternary face‐centered cubic (fcc) binary and ternary Cu alloys has been investigated with the EXAFS (extended x‐ray‐absorption fine structure) technique using synchrotron radiation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::869de9baa012b4eebc89b7a86c809256
https://doi.org/10.1063/1.350728
https://doi.org/10.1063/1.350728
Autor:
Chang-Beom Eom, B. Wilkens, Ann F. Marshall, S. S. Laderman, Jean-Marc Triscone, T. H. Geballe
Publikováno v:
Science. 251:780-783
A modulated structure has been fabricated from high transition temperature superconductors where the individual CuO2 planes are composed of alternating superconducting and insulating strips. This structure is made by growing a-axis—oriented YBa2Cu3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d459eba99ff930fe856c8cb34123a338
https://doi.org/10.1126/science.251.4995.780
https://doi.org/10.1126/science.251.4995.780
Autor:
R. D. Jacowitz, M. R. Beasley, J. L. Moll, R. C. Taber, T. H. Geballe, Chang-Beom Eom, S. S. Laderman, Ann F. Marshall, T. L. Hylton
Publikováno v:
Physical Review B. 43:2922-2933
The resistive losses near 10 GHz are measured at 4.2 K for ten c-axis-oriented ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7}$ thin films deposited in situ on MgO substrates. The losses range from 16\ifmmode\pm\else\textpm\fi{}3 \ensuremath
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0a8db5dc0febaef9f5c1596fc4959b
https://doi.org/10.1103/physrevb.43.2922
https://doi.org/10.1103/physrevb.43.2922
Autor:
Bruce M. Lairson, K. Yamamoto, J. Z. Sun, Steven M. Anlage, Chang-Beom Eom, John C. Bravman, Stephen K. Streiffer, R. D. Jacowitz, R. C. Taber, T. H. Geballe, S. S. Laderman, Ann F. Marshall
Publikováno v:
Physica C: Superconductivity. 171:354-383
High quality superconducting films of YBa 2 Cu 3 O 7− x were deposited in situ using single target 90° off-axis sputtering. We have investigated their superconducting DC and RF properties, their normal state properties, and their microstructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b923948d97e2a2c097985a9cbcc97d5
https://doi.org/10.1016/0921-4534(90)90153-6
https://doi.org/10.1016/0921-4534(90)90153-6
Publikováno v:
Journal of Materials Research. 5:2049-2055
A transmission electron microscopy study of a post-annealed YBa2Cu3O7−x thin film shows that extra Cu–O planes within the structure can aggregate as stacking faults to form a defect microstructure rather than forming the well-ordered Y2Ba4Cu8O16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a07a37b0d1f2321be1a3f9e1d30c3ca3
https://doi.org/10.1557/jmr.1990.2049
https://doi.org/10.1557/jmr.1990.2049
Publikováno v:
Physical Review B. 41:6564-6574
A directional solidification method for growing large single crystals in the ${\mathrm{Bi}}_{2}$${\mathrm{Sr}}_{2}$${\mathrm{CaCu}}_{2}$${\mathrm{O}}_{8+\mathrm{\ensuremath{\delta}}}$ system is reported. Ion doping, with replacement of La for Sr and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cea30b355d4d641354288033d44d19bc
https://doi.org/10.1103/physrevb.41.6564
https://doi.org/10.1103/physrevb.41.6564
Autor:
S. S. Laderman, James F. Gibbons, M.P. Scott, C.A. King, C. M. Gronet, K. Nauka, D. B. Noble, J. L. Hoyt, S. J. Rosner, J. E. Turner, Theodore I. Kamins
Publikováno v:
Thin Solid Films. 184:93-106
Limited reaction processing (LRP) of silicon-based materials is reviewed as an alternative growth method to molecular beam epitaxy (MBE). LRP is a chemical vapor deposition technique which uses wafer temperature, rather than gas flow switching, to in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e51af2302191df0556662354efa2d88
https://doi.org/10.1016/0040-6090(90)90402-y
https://doi.org/10.1016/0040-6090(90)90402-y