Zobrazeno 1 - 10
of 13
pro vyhledávání: '"S. S. Gots"'
Publikováno v:
Journal of Communications Technology and Electronics. 67:1216-1223
Publikováno v:
Measurement Techniques. 64:364-372
This article discusses the absence of methods for measuring low-frequency (LF) fluctuation processes at high temperatures and proposes an original bridge method for measuring the spectra of LF current fluctuations in the tungsten filaments of electri
Publikováno v:
Measurement Techniques. 62:358-364
We study metrological problems encountered in measuring the volume-average temperature of heated tungsten filaments. The process of heating is realized by electric currents within the temperature range 300–3000 K. The measurements were carried with
Publikováno v:
Izmeritel`naya Tekhnika. :51-56
Publikováno v:
E3S Web of Conferences, Vol 258, p 07043 (2021)
Social living conditions and related problems are one of the key indicators of the level and rate of socio-economic development of modern society. The housing problem is characterized by several indicators: the housing deficit (quantitative indicator
Publikováno v:
Vestnik Bashkirskogo universiteta. 8:301
Autor:
S. S. Gots, R. Z. Bakhtizin
Publikováno v:
Measurement Techniques. 51:1116-1121
The effect on the statistical properties of measured quantities of the modulation, in particular, multiplicative component of the noise due to the discrete nature of electron fluxes, used as the data linking channel in many analytical devices, is inv
Publikováno v:
Measurement Techniques. 46:568-572
A method is considered for designing a wide-band digitally controlled frequency and phase multiplier based on nonlinear polynomial transformation of Chebyshev type applied to the initial harmonic signal. The method provides an output signal with a fr
Publikováno v:
Technical Physics Letters. 24:866-868
A two-dimensional distribution function in the frequency range 0.03–1 Hz was used to investigate the statistical characteristics of the fluctuations of the field emission current from single crystals of tungsten and p-type silicon. In order to dete
Publikováno v:
Measurement Techniques; Jun2003, Vol. 46 Issue 6, p568-572, 5p