Zobrazeno 1 - 10
of 48
pro vyhledávání: '"S. S. Georgiev"'
Publikováno v:
Journal of Physics: Condensed Matter. 10:5515-5524
A physical model is presented which allows calculation of the carrier and potential distributions and the output voltage of a one dimensional position sensitive detector based on an ITO/a-Si:H/Pd structure. The calculation results are in agreement wi
Publikováno v:
Journal of Physics: Condensed Matter. 9:4995-5001
One- and two-dimensional position sensitive detectors based on an ITO - pSi structure have been fabricated and studied. The experimentally measured linear dependence between the photovoltage response and the light spot position is explained by a mode
Publikováno v:
Radiation Effects. 62:1-5
The variation of the fixed oxide charge and the surface state densiy concentration are investigated in MOS structures under γ-irradiation from a 60Co source. SiO2 in the studied samples was obtained in a planar plasma reactor at low temperature (300
Publikováno v:
In Microelectronics Reliability 1978 18(4):320-320
Publikováno v:
Environmental Monitoring & Assessment; Apr2023, Vol. 195 Issue 4, p1-20, 20p
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Dec2022, Vol. 40 Issue 6, p1-14, 14p
Publikováno v:
IEEE Sensors Journal; Mar2022, Vol. 22 Issue 5, p3911-3919, 9p
Publikováno v:
Condensed Matter; Jun2021, Vol. 6 Issue 2, p1-9, 9p
Publikováno v:
Russian Journal of General Chemistry. Jan2015, Vol. 85 Issue 1, p274-279. 6p. 1 Black and White Photograph, 1 Chart, 3 Graphs.