Zobrazeno 1 - 3
of 3
pro vyhledávání: '"S. S. Anwer Askari"'
Publikováno v:
IEEE Transactions on Electron Devices. 69:1115-1122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06818b55f9e518dc847b2a167f1466c9
https://doi.org/10.1109/ted.2022.3143077
https://doi.org/10.1109/ted.2022.3143077
Publikováno v:
2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
In this work we present a small signal analysis of Ge-Si 0.12 Ge 0.73 Sn 0.15 /Si 0.11 Ge 0.73 Sn 0.16 n-p-n mid-infrared transistor laser (TL) with strain-balanced Ge 0.85 Sn 0.15 multiple quantum well (QW) in the base. The frequency response of TL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1ba409cc371916ebb36abf89e5dde74
https://doi.org/10.1109/nusod.2018.8570273
https://doi.org/10.1109/nusod.2018.8570273
Publikováno v:
IEEE Transactions on Electron Devices; Mar2022, Vol. 69 Issue 3, p1115-1122, 8p