Zobrazeno 1 - 10
of 149
pro vyhledávání: '"S. Ruvimov"'
Autor:
S. Ruvimov, N. F. Shkodich, I. D. Kovalev, Alexander S. Mukasyan, S. G. Vadchenko, D. Yu. Kovalev, A. A. Nepapushev, Alexander S. Rogachev
Publikováno v:
Journal of Alloys and Compounds. 741:575-579
Amorphous Cu50Ti50 alloy was prepared by short-term (20 min) high-energy ball milling (HEBM). According to TEM, electron diffraction, and HAADF STEM results, the material was 93% amorphous with an admixture of nanocrystalline particles 2–8 nm in th
Autor:
S. S. Ruvimov, P. S. Kop’ev, G. P. Yablonskii, M. V. Rakhlin, M. V. Baidakova, Sergei Ivanov, I. V. Sedova, Evgenii V. Lutsenko, S. V. Sorokin, E. V. Zhdanova, M. M. Zverev, Sergei Gronin, N. A. Gamov, A. G. Vainilovich
Publikováno v:
Semiconductors. 49:331-336
The paper presents basic approaches in designing and growing by molecular beam epitaxy of (Zn,Mg)(S,Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets or ZnCdSe quantum wells (QW). The method of calculation of compensating sh
Publikováno v:
Technical Physics Letters. 32:1079-1082
It is shown that effective diagnostics of strongly doped Czochralski-grown silicon single crystals in the initial (as-grown) state is provided by methods based on the interference phenomena of dynamic x-ray diffraction: the Lang section topography an
Autor:
G. N. Mosina, L. M. Sorokin, J Kearns, S S Ruvimov, R. N. Kyutt, I. L. Shulpina, M. P. Scheglov, V. V. Ratnikov, V Todt
Publikováno v:
Journal of Physics D: Applied Physics. 38:A111-A116
A combination of x-ray diffraction methods and electron microscopy was used for the structural study of Czochralski silicon crystals highly doped by As. For as-grown crystals a weak strain field and probable clustering of As-impurity atoms follow fro
Autor:
Joachim Krüger, S. S. Ruvimov, Henrik Siegle, Yihwan Kim, Sudhir G. Subramanya, Piotr Perlin, Zuzanna Liliental-Weber, Eicke R. Weber
Publikováno v:
Journal of Applied Physics. 88:6032-6036
The influence of the composition of the low-temperature GaN buffer layer on the structural, electrical, and optical properties of the subsequently grown GaN epilayer by molecular-beam epitaxy is investigated. It is found that decreasing the N/Ga flux
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 447:614-618
Transmission electron microscopy has been employed to study the structure of polycrystalline CsI thin "lms and its transformation under exposure to humid air and UV irradiation. The catastrophic degradation of CsI thin "lm photocathode performance is
Autor:
Eicke R. Weber, S. S. Ruvimov, Jack Washburn, Y. Nabetani, A. Sasaki, Zuzanna Liliental-Weber
Publikováno v:
Thin Solid Films. 367:277-280
In Stranski–Krastanov mode, the transition from two-dimensional growth to three-dimensional growth occurs at a certain thickness: a transition thickness. In subsequent growth, misfit dislocations are incorporated at the interface between the substr
Publikováno v:
Solid State Communications. 113:553-558
We report on in situ studies of the vibrational properties of Si nanoparticles and ultrathin layers grown by dc magnetron sputtering in ultrahigh vacuum on amorphous MgO and Ag buffer layers. The average thickness of the Si layers ranged from monolay
Publikováno v:
Journal of Applied Physics. 85:7909-7913
The chemical, morphological, and structural characteristics of nitrogen plasma treated c-plane sapphire substrate surfaces were studied by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and transmission electron microscopy (TE
Publikováno v:
Physical Review B. 58:R4262-R4265
Interfacial compositional disordering in InGaAs/GaAs quantom dots has been used to tune their intersublevel energy spaceings (delta E subscript [(i + 1) - i]).