Zobrazeno 1 - 10
of 220
pro vyhledávání: '"S. Rouvimov"'
Autor:
Mikhail V. Maximov, Alexey M. Nadtochiy, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, Natalia V. Kryzhanovskaya, Eduard I. Moiseev, Nikita Yu. Gordeev, Yuriy M. Shernyakov, Alexey S. Payusov, Fedor I. Zubov, Vladimir N. Nevedomskiy, Sergei S. Rouvimov, Alexey E. Zhukov
Publikováno v:
Applied Sciences, Vol 10, Iss 3, p 1038 (2020)
We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition
Externí odkaz:
https://doaj.org/article/2ac0003b686647e9ab9589c240846e75
Autor:
Maksym Zhukovskyi, B. Qing, Badih A. Assaf, Logan Riney, Seul-Ki Bac, C. Bunker, Tatyana Orlova, Xiaofeng Liu, Jacek K. Furdyna, Margaret Dobrowolska, Jiashu Wang, S. Rouvimov
Publikováno v:
Physical Review B. 102
We report the measurement and analysis of weak antilocalization in ${\mathrm{Pb}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}\mathrm{Se}$ topological quantum wells in a regime where the elastic scattering length is larger than the magnetic length. We achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99e791aea5f5cc08f2a2031e147812e5
https://doi.org/10.1103/physrevb.102.155307
https://doi.org/10.1103/physrevb.102.155307
Autor:
S. Rouvimov, Alexey M. Nadtochiy, Mikhail V. Maximov, Alexey E. Zhukov, Sergey A. Mintairov, V. N. Nevedomskii, Nikolay A. Kalyuzhnyy
Publikováno v:
Semiconductors. 52:53-58
Hybrid quantum-confined heterostructures grown by metal-organic vapor-phase epitaxy (MOVPE) via the deposition of In0.4Ga0.6As layers with various nominal thicknesses onto vicinal GaAs substrates are studied by photoluminescence spectroscopy and tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daa31c666b02e20583172f98a11215b8
https://doi.org/10.1134/s1063782618010153
https://doi.org/10.1134/s1063782618010153
Autor:
Takeshi Kasama, Yu. B. Samsonenko, Vladimir G. Dubrovskii, A. I. Khrebtov, I. P. Soshnikov, Nika Akopian, Rodion R. Reznik, S. Rouvimov, G. E. Cirlin, Igor Shtrom
Publikováno v:
Crystal Growth & Design. 16:7251-7255
Based on the high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy studies, we unravel the origin of spontaneous core–shell AlGaAs nanowires grown by gold-assisted molecular beam epitaxy. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c283fdf6fe68b239f8e12364fa540b8
https://doi.org/10.1021/acs.cgd.6b01412
https://doi.org/10.1021/acs.cgd.6b01412
Autor:
Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, A. S. Payusov, Alexey M. Nadtochiy, Mikhail V. Maximov, S. Rouvimov, Alexey E. Zhukov
Publikováno v:
Semiconductors. 50:1180-1185
The methods of photoluminescence and photoconductivity spectroscopy and the spectroscopy of photocurrent of a p–i–n structure are used to study samples with hybrid quantum-confined medium “quantum well–dots” (QWD) structures grown on GaAs s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f35df40bb2eb7ff8a9b7df301d2e5e11
https://doi.org/10.1134/s1063782616090189
https://doi.org/10.1134/s1063782616090189
Autor:
T. V. Shubina, V. N. Jmerik, Dmitrii V. Nechaev, Bo Monemar, Galia Pozina, Stefan Ivanov, A. A. Toropov, S. Rouvimov, E. A. Shevchenko, Peder Bergman
Publikováno v:
physica status solidi c. 13:232-238
We report on photoluminescence (PL) spectroscopy and electron microscopy studies of an AlGaN quantum well (QW) structure grown by molecular beam epitaxy under metal-rich conditions with substrate rotation. Both techniques reveal unintentional formati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba775ac4ca1ccc9de21d8f46d351628b
https://doi.org/10.1002/pssc.201600009
https://doi.org/10.1002/pssc.201600009
Autor:
Ivan Mukhin, N. A. Kalyuzhnyy, A. V. Shelaev, K. G. Belyaev, S. A. Blundell, S. Rouvimov, Michael Yakimov, D. V. Lebedev, S. A. Mintairov, A. S. Vlasov, M. V. Rakhlin, Pavel N. Brunkov, Serge Oktyabrsky, V. A. Bykov, J. Kapaldo, Yu. M. Zadiranov, Alexander Mintairov, James L. Merz, Alexey M. Mozharov, A. A. Toropov
Publikováno v:
Physical Review B. 97
Structural and emission properties of few-electron In(Ga)P/GaInP quantum dots (QDs) representing natural Wigner molecules (WM) and whispering gallery mode (WGM) electron ($e$) cavities have been investigated. QD structures were grown using self-organ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61c62efa713fe14d12a1f53a5b2e8848
https://doi.org/10.1103/physrevb.97.195443
https://doi.org/10.1103/physrevb.97.195443
Autor:
V. N. Jmerik, Maher Aljohenii, S. Rouvimov, Peter S. Kop’ev, Dmitrii V. Nechaev, V. V. Ratnikov, E. V. Lutsenko, Abdulaziz Aljerwii, G. P. Yablonskii, Mikolai V. Rzheutski, Ahmed Y. Alyamani, Stefan Ivanov
Publikováno v:
Journal of Materials Research. 30:2871-2880
AlGaN-based quantum well (QW) heterostructures grown by plasma-assisted molecular beam epitaxy on c-Al2O3 substrates have been studied. The high-temperature (785 °C) synthesis of AlN buffer layer nucleated by a migration-enhanced epitaxy and includi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78aa32eb2a462f6a6aec2d8652d4b64c
https://doi.org/10.1557/jmr.2015.220
https://doi.org/10.1557/jmr.2015.220
Autor:
A. E. Zhukov, Mikhail V. Maximov, N. A. Kalyuzhnyy, A. S. Payusov, S. Rouvimov, S. A. Mintairov, A. M. Nadtochiy, Yu. M. Shernyakov
Publikováno v:
Semiconductors. 49:1090-1094
Heterostructures with InGaAs quantum dots (QDs) are synthesized on vicinal GaAs (001) substrates. The photoluminescence (PL) spectra and threshold characteristics of edge-emitting QD lasers are studied in the temperature range 10-400 K. The structura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2762e3f0745fefa5f629618865687bca
https://doi.org/10.1134/s106378261508014x
https://doi.org/10.1134/s106378261508014x
Autor:
V. Yu. Davydov, Andrey Bogdanov, S. Rouvimov, M. M. Kulagina, Daniele Barettin, S. T. Moroni, J. L. Merz, Emanuele Pelucchi, A. Gocalinska, Alexander Mintairov, A. S. Vlasov, S. I. Troshkov, D. V. Lebedev, Alexander N. Smirnov, J. Kapaldo, Gediminas Juska
Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29e69a2b21636d8da0f1e2d06cd5a5fd
