Zobrazeno 1 - 10
of 18
pro vyhledávání: '"S. Rasidah"'
Publikováno v:
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
High quality factor, Q of inductor operates at high frequency and baseband is reported in this paper. These inductors are design for mm-wave RoF application that compatible with matured CMOS13 technology established by Silterra, Malaysia. In this pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e80cfda794f5aa0e6249d45be90cffcb
https://doi.org/10.1109/rsm.2015.7354979
https://doi.org/10.1109/rsm.2015.7354979
Publikováno v:
RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics.
This paper presents a thorough design of 15 GHz Ku-Band medium Power Amplifier (MPA). The technology used for this design is 0.15 μm GaAs p-HEMT technology from WIN semiconductor. The type of active device selected for this design is from the deplet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0fe9fd7d3df8983b5b9f1f8295afd10
https://doi.org/10.1109/rsm.2013.6706486
https://doi.org/10.1109/rsm.2013.6706486
Publikováno v:
2011 IEEE Regional Symposium on Micro and Nano Electronics.
This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51d4a3b2f975d9d637770588e4fc7d45
https://doi.org/10.1109/rsm.2011.6088303
https://doi.org/10.1109/rsm.2011.6088303
Publikováno v:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).
This paper present the design of 3-stage 15 GHz power amplifier (PA) using 0.15 µm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10295cdf5fc4abc6edc9c4dd253d9b41
https://doi.org/10.1109/edssc.2010.5713755
https://doi.org/10.1109/edssc.2010.5713755
Publikováno v:
2008 IEEE International RF and Microwave Conference.
A single-pole double-throw (SPDT) transmit/receive (T/R) switch for 900 MHz applications has been designed in a 0.18 mum CMOS process. The switch exhibit a 16 dB input 1-dB compression point with output 1-dB compression point of 12.9 dB. At 900 MHz o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74573dd8b40d779ecd6947f99db0e8ab
https://doi.org/10.1109/rfm.2008.4897390
https://doi.org/10.1109/rfm.2008.4897390
Autor:
A.M. Abdul Fatah, A.I. Ahmad Ismat, Y. Mohamed Razman, S. Rasidah, M. Norman Fadhil Idham, D. Asban
Publikováno v:
2006 IEEE International Conference on Semiconductor Electronics.
Metamorphic InAlAs/InGaAs High Electron Mobility Transistors (HEMT) has demonstrated several advantages over Pseudomorphic-HEMT on GaAs and Lattice Matched-HEMT on InP substrate. The high Indium content of the channel (50%) lattice matched to the sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b97a663f8a31987e0bc7b31c66c76d8
https://doi.org/10.1109/smelec.2006.380734
https://doi.org/10.1109/smelec.2006.380734
Autor:
Yusof, Nur S.1 (AUTHOR) nursyahadahyusof@gmail.com, Noh, Norlaili M.1 (AUTHOR) eelaili@usm.my, Rajendran, Jagadheswaran2 (AUTHOR) jaga.rajendran@usm.my, Manaf, Asrulnizam A.2 (AUTHOR) eeasrulnizam@usm.my, Yusof, Yusman M.3 (AUTHOR) yusman_yusof@silterra.com, Ramiah, Harikrishnan4 (AUTHOR) hrkhari@um.edu.my, Mohd, Shukri K. K.2 (AUTHOR) shukri.mohd@usm.my, Mohamed, Mohamed F. P.1 (AUTHOR) fauzi.packeer@usm.my
Publikováno v:
IETE Journal of Research. Jul/Aug2022, Vol. 68 Issue 4, p2764-2778. 15p.
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