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Ti/Al-based contacts to p-type SiC and GaN for power device applications

Autor: F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2

Publikováno v: Physica status solidi. A, Applications and materials science
214 (2017): 1600357-1–1600357-7. doi:10.1002/pssa.201600357
info:cnr-pdr/source/autori:F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2/titolo:Ti%2FAl-based contacts to p-type SiC and GaN for power device applications/doi:10.1002%2Fpssa.201600357/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600357-1/pagina_a:1600357-7/intervallo_pagine:1600357-1–1600357-7/volume:214

Metal contacts (Schottky or Ohmic) to p-type wide band gap (WBG) semiconductors SiC and GaN are important for power devices technologies. This work reports on the properties of Ti/Al-based contacts to p-type 4H-SiC and p-type GaN, monitored using dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::46b0334f4e76e026f90902f731890d2b

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SiC Power Devices: Technologies, Products and Applications

Autor: S. Coffa, M. Saggio, S. Rascuna

Publikováno v: Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f63c984d3085950409715a6c76bf7d15
https://doi.org/10.7567/ssdm.2016.n-2-02

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Impact of phosphorus implantation on the electrical properties of SiO2/4H-SiC interfaces annealed in N2O

Autor: P. Fiorenza 1, S. Di Franco 1, F. Giannazzo 1, S. Rascuna 2, M. Saggio 2, F. Roccaforte 1

Publikováno v: Materials science forum 858 (2016): 701–704. doi:10.4028/www.scientific.net/MSF.858.701
info:cnr-pdr/source/autori:P. Fiorenza 1; S. Di Franco 1; F. Giannazzo 1; S. Rascuna 2; M. Saggio 2; F. Roccaforte 1/titolo:Impact of phosphorus implantation on the electrical properties of SiO2%2F4H-SiC interfaces annealed in N2O/doi:10.4028%2Fwww.scientific.net%2FMSF.858.701/rivista:Materials science forum/anno:2016/pagina_da:701/pagina_a:704/intervallo_pagine:701–704/volume:858

In this work, the combined effect of a shallow phosphorus (P) pre-implantation and of a nitridation annealing in N2O on the properties of the SiO2/4H-SiC interface has been investigated. The peak carrier concentration and depth extension of the elect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::8d58a549c1f62ceaf6fa204f6e1b6d25

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Temperature and density in heavy ion reactions at intermediate energies

Autor: V. Baran, C. Sfienti, E. Rapisarda, Giuseppina Raciti, S. Rascuna, L. Spezzi, M. De Napoli, G. Imme

Publikováno v: Nuclear Physics A. 734:528-531

A wide range of projectile, target masses and incident energies have been investigated at the LNS (Catania). The experimental setup allowed, simultaneously, a complete reconstruction of the projectile decay and a determination of temperatures and den

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a6ac6f24baeed20f9e4f09d4e4a2884
https://doi.org/10.1016/j.nuclphysa.2004.01.097

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