Zobrazeno 1 - 10
of 169
pro vyhledávání: '"S. Ramey"'
A Unified Aging Model Framework Capturing Device to Circuit Degradation for Advance Technology Nodes
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd84a920b3787cc936a16b0fb64a17c7
https://doi.org/10.1109/irps48203.2023.10117914
https://doi.org/10.1109/irps48203.2023.10117914
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0291317822900acab121797d8fd1d30
https://doi.org/10.1109/irps48203.2023.10117992
https://doi.org/10.1109/irps48203.2023.10117992
Akademický článek
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Publikováno v:
Behavioral Interventions. 37:887-897
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fe3f5c89f36b8517918c4a882c85311
https://doi.org/10.1002/bin.1859
https://doi.org/10.1002/bin.1859
Autor:
Erica S. Ramey
Publikováno v:
Journal of Psychosocial Nursing and Mental Health Services. :1-2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c2b32eff3db33b981be105d0e72d531
https://doi.org/10.3928/02793695-20230111-01
https://doi.org/10.3928/02793695-20230111-01
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1a5e4a14fa11710b59db82b07329c0
https://doi.org/10.1109/irps48227.2022.9764519
https://doi.org/10.1109/irps48227.2022.9764519
Publikováno v:
IRPS
With continuous channel length scaling and ongoing demand for higher operating frequencies, HCI degradation and combining BTI and HCI aging mechanisms in compact aging models becomes important for accurately capturing end-of-life circuit behavior. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::100015c893eded08ebe49e0787f6124e
https://doi.org/10.1109/irps45951.2020.9129601
https://doi.org/10.1109/irps45951.2020.9129601
Autor:
Benjamin J. Orr, Nathan Jack, C. Auth, A. Schmitz, Tony Acosta, Steven S. Poon, Che-Yun Lin, Abdur Rahman, C. AnDyke, Rahim Kasim, K. Downes, G. McPherson, Sunny Chugh, Madhavan Atul, D. Nminibapiel, Adam Neale, K. Sethi, Seung Hwan Lee, S. Ramey, Tanmoy Pramanik, Michael L. Hattendorf, Emre Armagan, J. Palmer, Subhash M. Joshi, Ian R. Post, C. M. Pelto, P. Nayak, Yeoh Andrew W, G. Martin, Gerald S. Leatherman, H. Wu, N. Seifert, A. Lowrie, R. Grover, H. Mao
Publikováno v:
IRPS
We provide a comprehensive overview of the reliability characteristics of Intel’s 10+ logic technology. This is a 10 nm technology featuring the third generation of Intel’s FinFETs, seventh generation of strained silicon, fifth generation of high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e7a8286d09b3f3bfcb1c27f6a51e61
https://doi.org/10.1109/irps45951.2020.9128345
https://doi.org/10.1109/irps45951.2020.9128345
Autor:
Jeffery Hicks, Swaroop Kumar Namalapuri, S. Ramey, Jihan Standfest, A. H. Davoody, Balkaran Gill, P Supriya, T. Mutyala, Ketul B. Sutaria, Inanc Meric
Publikováno v:
IRPS
Circuit reliability is a significant concern in scaled technologies. Physical aging models derived by DC stress on discrete devices are accurate to an extent, but can be further improved by evaluating the behaviour of simple circuits such as ring osc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92e1d3e8db04ba67afcdc9d97dfabbfe
https://doi.org/10.1109/irps45951.2020.9128347
https://doi.org/10.1109/irps45951.2020.9128347
Autor:
C.-Y. Su, M. Maksud, James Waldemer, David Young, J. Palmer, S. Ramey, Mark Armstrong, H. Li, C. Perini, L. Paulson, M. El-tanani, H. Greve, Benjamin J. Orr, Sunny Chugh, Y. Yang
Publikováno v:
IRPS
The 22FFL technology developed for operation to 3.3V is used to investigate process and design considerations required to extend technology capability to 12 V applications. A prototype chip was carefully designed in close consideration with the techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45dc665dc065eb2ae6d5561d5bd1891d
https://doi.org/10.1109/irps45951.2020.9128314
https://doi.org/10.1109/irps45951.2020.9128314