Výsledky vyhledávání - "S. R. Weinzierl"

SOI material properties determined by electrical characterization

Autor: T. Abe, S. R. Weinzierl, M. Pawlik, R. J. Hillard, J. M. Heddleson, P.C. Karulkar, P. Rai-Choudhury

Publikováno v: Microelectronic Engineering. 19:827-832

It is shown that bonded SOI structures can be qualified for device fabrication through a series of eletrical measurements without fabrication of special test strucutres. The electrical methods include MOSCV, MOSIV, point contact MOS transistor (PCMOS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3348c58181e0cec1bb24f2e86a882bad
https://doi.org/10.1016/0167-9317(92)90554-5

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Evaluation of diamond-ground beveled surfaces with Hg gate capacitance–voltage and current–voltage

Autor: Robert G. Mazur, Robert J. Hillard, S. R. Weinzierl, J. C. Sherbondy, C. L. Hartford

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:411

The spreading resistance profiling (SRP) method has undergone significant improvements over the last five years, enhancing the techniques’ capability for profiling sub-100 nm junctions. Newly developed procedures for conditioning probes, preparing

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e29b9e266e21e7dcd686e6100d5d320c
https://doi.org/10.1116/1.589822

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Profiling of silicide–silicon structures using a combination of the spreading resistance and point contact current–voltage methods

Autor: R. J. Hillard, R. G. Mazur, P. Rai‐Choudhury, J. M. Heddleson, S. R. Weinzierl

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:317

Silicides are increasingly being used as diffusion sources to form the ultra‐shallow, low resistance source‐drain junctions, which will be needed in the next generation of ultra‐large‐scale integration technology. The silicide thickness and i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a0b234c9802658d5cb20605c23aec9df
https://doi.org/10.1116/1.587160

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Accurate profiling of ultra-shallow implants with mercury gate metal–oxide–semiconductor capacitance–voltage

Autor: P. Rai‐Choudhury, Roger Le Dudal, J. M. Heddleson, S. R. Weinzierl, R. J. Hillard, R. G. Mazur

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:336

The precise control of ion implants for threshold voltage adjustment requires formation of ultra‐shallow electrically active carrier profiles, which begin at the Si–SiO2 interface. Obtaining accurate and precise carrier density profiles near the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57b835807a60b1518dd47d66c15abd8d
https://doi.org/10.1116/1.587121

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Detection of anomalous defect-enhanced diffusion using advanced spreading resistance measurements and analysis

Autor: S. R. Weinzierl, P. Rai‐Choudhury, R. G. Mazur, J. M. Heddleson, C. M. Osburn, R. J. Hillard

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:322

Advanced spreading resistance measurements and analysis techniques are used to determine the dopant profiles in two ultra‐shallow silicon metal–oxide–semiconductor source/drain structures which were germanium preamorphized prior to implant. Alt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b0ab013a04d528aee626d17918e6b34
https://doi.org/10.1116/1.587161

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