Zobrazeno 1 - 8
of 8
pro vyhledávání: '"S. R. Tumkovskiy"'
Publikováno v:
INFORMACIONNYE TEHNOLOGII. 27:59-64
A model and a method for mathematical modeling of radiation charging of polymer microelectronic equipment housings with increased conductivity are developed, which are based on the application of the approximation function of the experimental depende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::713b690e33964386bad71aa9808dd3b0
https://doi.org/10.17587/it.27.59-64
https://doi.org/10.17587/it.27.59-64
Autor:
A. V. Sarafanov, S. R. Tumkovskiy, V. A. Komarov, Ooo Vitte Consalting , Moscow, Russian Federation
Publikováno v:
INFORMACIONNYE TEHNOLOGII. 27:41-50
As part of the digital transformation of various areas of human activity, the urgent task is to transform existing business processes (BP) in order to increase their variability according to the needs of the customer, to increase productivity, qualit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a23082f0b2e26b3b1a8ad36e76066a6
https://doi.org/10.17587/it.27.41-50
https://doi.org/10.17587/it.27.41-50
Publikováno v:
Information and Control Systems. :83-94
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a39eef533f25399fcc6c8e8ccc3efd8
https://doi.org/10.31799/1684-8853-2019-2-83-94
https://doi.org/10.31799/1684-8853-2019-2-83-94
Publikováno v:
2021 International Seminar on Electron Devices Design and Production (SED).
A computer simulation of the depth course of the absorbed dose as a function of the electronic irradiation energy of the acting in the range of 30 - 60 keV was performed, and calculations of the dose accumulation factor under these conditions were pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cba038c0b61413fce2fcc2a88307833
https://doi.org/10.1109/sed51197.2021.9444535
https://doi.org/10.1109/sed51197.2021.9444535
Publikováno v:
2019 International Seminar on Electron Devices Design and Production (SED).
Computer simulations of electrostatic discharges (ESD) effect on high-power MOSFET-transistors with built-in protection have been carried out. It was found that the transistors with low gate-source capacitance are more sensitive to the ESD effect.The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d41ff3f9267f4b42de5605243e9f644
https://doi.org/10.1109/sed.2019.8798468
https://doi.org/10.1109/sed.2019.8798468
Publikováno v:
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT).
In operation results of computer simulation of characteristics of the standard analog device — the heterodyne executed on the printed circuit board from the composite dielectric having feeble conductivity are explained. Results of simulation showed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7876012526ed1578725a2a0f45678306
https://doi.org/10.1109/mwent.2018.8337182
https://doi.org/10.1109/mwent.2018.8337182
Publikováno v:
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT).
Digital control systems are considered, the functioning of which can be represented as a sequence of functions of a finite alphabet. For such systems design debugging by simulation it is necessary to generate the minimal complete, in the sense of a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309f35c5d9c9b2524e1dc206647e3570
https://doi.org/10.1109/mwent.2018.8337238
https://doi.org/10.1109/mwent.2018.8337238
Publikováno v:
2016 International Siberian Conference on Control and Communications (SIBCON).
Three methods of operational amplifier (Op amp) slew rate verification are considered. These methods are illustrated through the example of SPICE macro models of Op amp LMH6642 by Texas Instruments and ОР37 by Analog Devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e04007c13f35e6063229d39ececfb76a
https://doi.org/10.1109/sibcon.2016.7491727
https://doi.org/10.1109/sibcon.2016.7491727