Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process

Autor: Yaw S. Obeng, Gregory B. Shinn, G. R. Fox, Theodore S. Moise, J. S. Martin, A. McKerrow, J. Gertas, S. R. Summerfelt, K. R. Udayakumar, J. Eliason, J. Rodriguez, R. Bailey, A. Haider, K. Remack, K. Boku

Publikováno v: Japanese Journal of Applied Physics. 46:2180-2183

We report the electrical properties of a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm 5 lm Cu interconnect complementary metal oxide semi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89d8da37c116c0c147b55c25bcf4ae62
https://doi.org/10.1143/jjap.46.2180

Imaging small spinel particles in an NiO matrix

Autor: C. B. Carter, D. R. Rasmussen, S. Mckernan, S. R. Summerfelt

Publikováno v: Journal of Microscopy. 179:77-89

SUMMARY The possibility of imaging NiFe2O4 spinel particles, with a dimension of only 1–3 nm, which are embedded in an NiO matrix has been examined. Computer image simulation studies based on the multislice method and complete, atomistic models of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50d26948abcf3d2e8e219cdf21de2c41
https://doi.org/10.1111/j.1365-2818.1995.tb03614.x

Full-Bit Functional, High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic Process

Autor: B. Khan, Glen R. Fox, J. Rodriguez, J. Groat, A. Haider, R. Bailey, N. Schauer, Sudhir K. Madan, K. Remack, K. R. Udayakumar, Yaw S. Obeng, K. Boku, A. McKerrow, G. Albrecht, J. S. Martin, Gregory B. Shinn, E. Jabillo, J. Walbert, S. R. Summerfelt, Theodore S. Moise, Hugh P. McAdams, Sanjeev Aggarwal, D. Anderson, J. Gertas, Francis G. Celii, J. Eliason

Publikováno v: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e4b31f513be59a90fe59e7f110a80021
https://doi.org/10.7567/ssdm.2006.f-1-2

Electrical properties of submicron (≥0.13 μm/sup 2/) Ir/PZT/Ir capacitors formed on W plugs

Autor: Stephen T. Johnston, Daniel J. Vestyck, Jun Amano, Stephen R. Gilbert, Luigi Colombo, Rahim Kavari, G. Xing, S. R. Summerfelt, M. W. Russell, Alvin Leng Sun Loke, Tomoyuki Sakoda, S. M. Bilodeau, Theodore S. Moise, T. Hsu, L. A. Wills, S. Ma

Publikováno v: International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Summary form only given. High-density, embedded ferroelectric memory (FeRAM) has the potential to replace embedded flash, embedded DRAM, and non-cache SRAM and could be a key enabler for future system-on-a-chip applications. Despite this appeal, the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bda3649d988a789a71051253276fbfb6
https://doi.org/10.1109/iedm.1999.824305

Processing and Device Issues of High Permittivity Materials for Drams

Autor: B. E. Gnade, Darius L. Crenshaw, S. R. Summerfelt

Publikováno v: Science and Technology of Electroceramic Thin Films ISBN: 9789048145140
Science and Technology of Electroceramic Thin Films

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::43b86c6ee851e0ad072ce237b1fae9c3
https://doi.org/10.1007/978-94-017-2950-5_27