Zobrazeno 1 - 10
of 16
pro vyhledávání: '"S. R. Mejia"'
Publikováno v:
Canadian Journal of Physics. 69:165-169
Silicon dioxide (SiO2) films were deposited by a new electron cyclotron resonance (ECR) microwave plasma enhanced chemical vapor deposition (PECVD) process at various deposition temperatures ranging from room temperaure (~25 °C) to 300 °C. The depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::578d0887c515279fd8e1c142870f5990
https://doi.org/10.1139/p91-025
https://doi.org/10.1139/p91-025
Publikováno v:
MRS Proceedings. 225
Silicon dioxide (SiO2) films were fabricated by microwave ECR plasma processing at 300°C, the range of the film thicknesses being 200 - 300 Å. Two groups of films were fabricated; group A with the substrates placed in a position directly facing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6c5c239e776c7bf3c2a644370d56033
https://doi.org/10.1557/proc-225-277
https://doi.org/10.1557/proc-225-277
Publikováno v:
MRS Proceedings. 223
Silicon dioxide (SiO2) films were fabricated by microwave ECR plasma processing. Two groups of films were fabricated; group A with the substrates placed in a position directly facing the plasma so that the substrates as well as the on-growing films w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cb5edc1c27b7ca4cc5ec35195bf1b74
https://doi.org/10.1557/proc-223-69
https://doi.org/10.1557/proc-223-69
Publikováno v:
Journal of The Electrochemical Society. 138:325-326
We present the electronic properties of very thin SiO 2 films (70-120 A) deposited by the new method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b2031a68b4d2a947487ca60b7d5d683
https://doi.org/10.1149/1.2085566
https://doi.org/10.1149/1.2085566
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2170
An electron cyclotron resonance microwave plasma processing system consisting of a plasma chamber and a processing chamber as well as a new apparatus called the ‘‘species selector and energy controller (SSEC)’’ are described in detail. Silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b40d4e72a162a120a050f973d42ad7d4
https://doi.org/10.1116/1.586185
https://doi.org/10.1116/1.586185
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:50
Dielectric behavior of SiO2 films fabricated by microwave electron cyclotron resonance (ECR) plasmas under high‐electric stresses has been studied on the basis of the current–voltage (I–V) characteristics, the capacitance–voltage (C–V) char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f45884ccbbe27616a551c7d35d060b7e
https://doi.org/10.1116/1.585789
https://doi.org/10.1116/1.585789
Publikováno v:
Canadian Journal of Physics. 61:305-308
Hydrogenated amorphous-silicon thin films (a-Si:H) were deposited by microwave plasma chemical-vapour decomposition of SiH4, on thin polyethylene sheets. The high-resolution, far infrared measurements were performed on these films in the 700–50 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7370e1ded59dbf524e407d05d78dfb4
https://doi.org/10.1139/p83-041
https://doi.org/10.1139/p83-041
Publikováno v:
Journal of Non-Crystalline Solids. :727-730
Hydrogenated amorphous silicon (a-Si:H) films have been fabricated by a novel method of microwave glow-discharge deposition from SiH4 and H2, operating at 2.45 GHz. The properties of the deposited films are dependent upon the confinement of the micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20630e5ee66ed9df847b064f21811205
https://doi.org/10.1016/0022-3093(83)90274-0
https://doi.org/10.1016/0022-3093(83)90274-0
Autor:
Howard C. Card, P. K. Shufflebotham, Robert D. McLeod, K. C. Kao, Douglas J. Thomson, J.F. White, S. R. Mejia, J. Shellenberg, W. Fries
Publikováno v:
Journal of Non-Crystalline Solids. :765-768
Microwave excitation of plasmas undergoing electron cyclotron resonance (ECR) have been used to fabricate silicon films with a wide range of properties that include micro-crystalline Si:H (uc-Si) and a-Si:H. Under ECR conditions the microwave power e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb12ad901d3130880fd0cfe10d0929f8
https://doi.org/10.1016/0022-3093(85)90772-0
https://doi.org/10.1016/0022-3093(85)90772-0
Publikováno v:
Journal of Applied Physics. 65:2457-2463
Silicon dioxide films were deposited on crystalline silicon substrates by electron cyclotron resonant (ECR) microwave plasma‐enhanced chemical vapor deposition (PECVD). Films were grown on Si〈100〉 substrates at temperatures of 140–600 °C, fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c4d91e715a863bcdbea388537e6203
https://doi.org/10.1063/1.342815
https://doi.org/10.1063/1.342815