Zobrazeno 1 - 3
of 3
pro vyhledávání: '"S. R. Lokhorst"'
Publikováno v:
SPIE Proceedings.
In this work we address the computation times of numerical studies in dimensional metrology. In particular, full Monte-Carlo simulation programs for scanning electron microscopy (SEM) image acquisition are known to be notoriously slow. Our quest in r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::943f92f1e6081acb901e7cb4f9500257
https://doi.org/10.1117/12.2219160
https://doi.org/10.1117/12.2219160
Publikováno v:
Microelectronic Engineering, 155
In the simulation of secondary electron yields (SEY) and secondary electron microscopy (SEM) images, there is always the question: "are we using the correct scattering cross-sections?". The three scattering processes of interest are quasi-elastic pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9077b6539b8110b426851afa01e32300
http://resolver.tudelft.nl/uuid:8b1caf25-3a3d-4008-a341-aae1ff4df574
http://resolver.tudelft.nl/uuid:8b1caf25-3a3d-4008-a341-aae1ff4df574
Publikováno v:
Proceedings of SPIE-International Society for Optical Engineering. Cain, J.P., Sanchez, M.I. (eds.). Metrology, Inspection and Process Control for Microlithography XXIX, San Jose, USA, 23-26 Feb. 2015. Vol. 9424.
We have investigated in a numerical study the determination of sidewall roughness (SWR) from top down scanning electron microscopy (SEM) images. In a typical metrology application, top-down SEM images are acquired in a (critical-dimension) SEM and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e514f1e944dc801302329fb93963e110
http://resolver.tudelft.nl/uuid:5fa8aa26-f4b9-42f3-b038-405644ae7f32
http://resolver.tudelft.nl/uuid:5fa8aa26-f4b9-42f3-b038-405644ae7f32