Zobrazeno 1 - 10
of 30
pro vyhledávání: '"S. R. Kasi"'
Autor:
M. Liehr, S. R. Kasi
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:795-801
SiO2/Si interfaces with minimal defect densities will be required for the proper functioning of field effect transistors (FET) and device isolation schemes in future semiconductor technology. Control of the wafer surface contamination will become cri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e981d5f538c3610ba6d8ac90cd1c717
https://doi.org/10.1116/1.577674
https://doi.org/10.1116/1.577674
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:863-868
The chemical vapor deposition of Cu from the 1,5‐cyclooctadiene copper(I) hexafluoroacetylacetonate (COD‐Cu‐hfac) precursor has been studied using x‐ray photoelectron spectroscopy, high‐resolution electron energy‐loss spectroscopy, and in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::458aad22cf39b52b01fd1256156e7b3e
https://doi.org/10.1116/1.577685
https://doi.org/10.1116/1.577685
Publikováno v:
Materials Science Forum. :237-290
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e40ec11914da3b9fdcc22868b98dfd7f
https://doi.org/10.4028/www.scientific.net/msf.52-53.237
https://doi.org/10.4028/www.scientific.net/msf.52-53.237
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2960-2964
Epitaxial silicon has been grown on Si(100) wafers using SiH4 in a rapid thermal chemical vapor deposition reactor in the temperature regime from 450–700 °C. Gas analysis during growth and thermal desorption spectra (TDS) after growth were measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f755bb8589ceedc831f8d8a652b35926
https://doi.org/10.1116/1.576613
https://doi.org/10.1116/1.576613
The chemical physics of low-energy ion beam-surface interactions: The panorama of phenomena involved
Autor:
J. Wayne Rabalais, S. R. Kasi
Publikováno v:
Radiation Effects and Defects in Solids. 112:119-134
This article reviews the panorama of phenomena involved in low energy (1–1000 eV) ion beam-surface interactions. The fundamental chemical and physical processes governing these low energy collisions are delineated and discussed. Interactions of bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c55cdf3d1db1d5a2614d80a3cf683eaa
https://doi.org/10.1080/10420159008213038
https://doi.org/10.1080/10420159008213038
Publikováno v:
Applied Physics Letters. 60:1585-1587
The fundamental surface chemistry underlying selectivity in copper chemical vapor deposition (CVD) from COD‐Cu‐hfac and Cu(hfac)2 has been determined. Both electronic and chemistry contributions strongly influence the precursor reactivity on oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bef274b17bcf15949feb95686761c29
https://doi.org/10.1063/1.107259
https://doi.org/10.1063/1.107259
Publikováno v:
Applied Physics Letters. 60:50-52
The mechanism of copper chemical vapor deposition from Cu(II)bis‐hexafluoroacetylacetonate [Cu(hfac)2] and 1,5‐cyclooctadiene‐Cu(I)‐hexafluoroacetylacetonate (COD‐Cu‐hfac) has been determined. The results explain the different processing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dac47aab9569b0062a9cd5c647649883
https://doi.org/10.1063/1.107370
https://doi.org/10.1063/1.107370
Hydrocarbon reaction with HF‐cleaned Si(100) and effects on metal‐oxide‐semiconductor device quality
Publikováno v:
Applied Physics Letters. 59:108-110
The surface reactivity of hydrogen‐passivated, HF‐cleaned Si(100) towards hydrocarbon adsorption is examined by surface analysis; most hydrocarbons adsorb on the surface. Dangling bonds formed during thermal processing react with fragmented organ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98dde47417e3b32b06b0dffb950f11a1
https://doi.org/10.1063/1.105560
https://doi.org/10.1063/1.105560
Publikováno v:
Applied Physics Letters. 58:2975-2977
The chemical environment of fluorine in the oxide layer of metal‐oxide‐semiconductor (MOS) structures has been examined by surface analytical spectroscopies. HF treatment of Si(100) results in subsurface SiF formation. Upon oxidation, oxyfluoride
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56a62774435dfcf2a68aec995a1cc591
https://doi.org/10.1063/1.104686
https://doi.org/10.1063/1.104686
Autor:
S. R. Kasi, Michael Liehr
Publikováno v:
Applied Physics Letters. 57:2095-2097
Ultraviolet/Oxygen (UV/O2) based vapor phase cleaning of Si(100) surfaces dosed with specific organic molecules has been studied by surface and gas phase analytical techniques. The treatment results in chain scission and carbon volatilization as CO a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f715cffe92d3e3fa1a518906886588a1
https://doi.org/10.1063/1.103952
https://doi.org/10.1063/1.103952