Zobrazeno 1 - 7
of 7
pro vyhledávání: '"S. R. Jost"'
Publisher Summary Development of platinum-containing particulate catalysts for the oxidation of SO 2 ceased about 50 years ago. Examination of typical patents from that time shows that important concepts in supported catalysts such as metal dispersio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::779c7c40227a68f3bc99487346684583
https://doi.org/10.1016/b978-012508460-4/50006-1
https://doi.org/10.1016/b978-012508460-4/50006-1
Autor:
S. R. Jost, H. S. Cole, R. N. Bicknell, N. C. Giles‐Taylor, Thomas H. Myers, H. H. Woodbury, R. W. Yanka, J. W. Cook, J. F. Schetzina
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:71-75
Properties and applications of MBE‐grown (111) CdTe films on (0001) sapphire substrates are discussed. From Laue diffraction studies, the epitaxial orientation relationships are (111)CdTe∥ (0001) sapphire, with [110]CdTe∥[1120] sapphire. On the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7509b3c9bdfb71fda8542288d68da40
https://doi.org/10.1116/1.573249
https://doi.org/10.1116/1.573249
Publikováno v:
Journal of Applied Physics. 53:9232-9234
Properties of CdTe/InSb heterostructures grown on (111)B InSb substrates by molecular beam epitaxy are reported. X‐ray diffraction and uv reflectance measurements were used to judge the quality of epitaxy for layers grown under various conditions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7843163a7696236fe23330961852962c
https://doi.org/10.1063/1.330400
https://doi.org/10.1063/1.330400
Publikováno v:
SPIE Proceedings.
InSb has served as an important mid-wave IR (X=3-5pm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as a f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c64e1970ebd5b43d6d7d765b40aff79
https://doi.org/10.1117/12.943545
https://doi.org/10.1117/12.943545
Publikováno v:
MRS Proceedings. 90
InSb has served as an important mid-wave IR (λ=3−5μm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d4a01748fc4c052c5b67fd42c15c74
https://doi.org/10.1557/proc-90-429
https://doi.org/10.1557/proc-90-429
Autor:
S. R. Jost
Publikováno v:
Technical Issues in Infrared Detectors and Arrays.
Infrared systems applications often require low noise detectors to achieve background limited performance. In this paper, the dark current (noise) mechanisms of InSb MIS detectors will be discussed from a theoretical viewpoint and a model of the dark
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8b773b2ab6899eade92e1ecc99aab7
https://doi.org/10.1117/12.935737
https://doi.org/10.1117/12.935737
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4:622
Calculations are shown to investigate the possibility of modulating the channel conductance of InSb field‐effect transistors (FET’s) at 300 K. Molecular beam epitaxy (MBE) grown InSb metal‐insulator‐semiconductor field‐effect transistors (M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35d39b5fa705b4de166710ec52a20187
https://doi.org/10.1116/1.583393
https://doi.org/10.1116/1.583393