Bioactivity of TiN-coated titanium implants

Autor: Lucio Colombi Ciacchi, S. Piscanec, Orfeo Sbaizero, S. Meriani, Giovanni Comelli, Alessandro De Vita, Erik Vesselli

Publikováno v: Acta materialia 52 (2004): 1237–1245. doi:10.1016/j.actamat.2003.11.020
info:cnr-pdr/source/autori:Piscanec, S (1); Ciacchi, LC (2); Vesselli, E (3,4,7); Comelli, G (3,4,7); Sbaizero, O (1,7); Meriani, S (1,7); De Vita, A (1,5,6,7)/titolo:Bioactivity of TiN-coated titanium implants/doi:10.1016%2Fj.actamat.2003.11.020/rivista:Acta materialia/anno:2004/pagina_da:1237/pagina_a:1245/intervallo_pagine:1237–1245/volume:52

Titanium nitride has excellent corrosion and wear resistance properties, and has been used as a hard coating material on titanium hip prostheses. Analysis of explants reveals that calcium phosphate phases grow spontaneously and stick strongly on TiN-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ca0a2a44817e3c204fe5bf707f6e03e
https://doi.org/10.1016/j.actamat.2003.11.020

Ion Beam Doping of Silicon Nanowires

Autor: Simone Pisana, Alan Colli, S. Piscanec, Andrea C. Ferrari, Carsten Ronning, A. Fasoli

Publikováno v: Nano Letters. 8:2188-2193

We demonstrate n- and p-type field-effect transistors based on Si nanowires (SiNWs) implanted with P and B at fluences as high as 10(15) cm (-2). Contrary to what would happen in bulk Si for similar fluences, in SiNWs this only induces a limited amou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddb0955cede59d144f179fe20b1d2c6a
https://doi.org/10.1021/nl080610d

Gold catalyzed growth of silicon nanowires by plasma enhanced chemical vapor deposition

Autor: Junfeng Geng, S. Piscanec, R. J. Neill, Rafal E. Dunin-Borkowski, Andrea C. Ferrari, Caterina Ducati, John Robertson, Stephan Hofmann

Publikováno v: Journal of Applied Physics. 94:6005-6012

Silicon nanowires were selectively grown at temperatures below 400 °C by plasma enhanced chemical vapor deposition using silane as the Si source and gold as the catalyst. A detailed growth study is presented using electron microscopy, focused ion be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e0e45455a25421a08bd803ee3b716e38
https://doi.org/10.1063/1.1614432

Phonon renormalization in doped bilayer graphene

Autor: Andrea C. Ferrari, Biswanath Chakraborty, Anindya Das, Simone Pisana, A. K. Sood, S. Piscanec

Publikováno v: Physical Review B. 79

We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the $\Gamma$ point. The bilayer has two conductio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff66ae150eb731d1c562fdb086e9528b
https://doi.org/10.1103/physrevb.79.155417

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

Autor: Denis M. Basko, S. Piscanec, Andrea C. Ferrari

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2009, 80, pp.165413. ⟨10.1103/PhysRevB.80.165413⟩

Raman spectroscopy is a fast, non-destructive means to characterize graphene samples. In particular, the Raman spectra show a significant dependence on doping. While the change in position and width of the G peak can be explained by the non-adiabatic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13dcc699b79c845157093315041becf2