Zobrazeno 1 - 10
of 65
pro vyhledávání: '"S. Piramasubramanian"'
Publikováno v:
Optical and Quantum Electronics. 54
Publikováno v:
Defence Science Journal. 70:529-533
Theoretical analysis of Transistor Laser is carried out and the static and frequency responses for different collector voltages, under common emitter configuration are determined. The threshold current (Ith) is observed as 33mA and it increases linea
Publikováno v:
Materials Today: Proceedings. 24:531-537
Planar microstrip antennas for wearable sensor applications have been investigated. The substrate materials considered for this work includes cotton, paper, plastic and polystyrene. These materials are analyzed as they are flexible, conformal and imp
Akademický článek
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Akademický článek
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Publikováno v:
Optics Communications. 439:224-232
In this work, we analyze the third and fifth order intermodulation distortion components and its reduction in an 1 . 3 μ m transistor laser by feedback harmonic injection technique. The device is modeled by rate equations, which are numerically solv
Autor:
J. Logeswaran, S. Piramasubramanian, A. Saravana Kumaran, M. Ganesh Madhan, K. C. Manoj, S. Ajay
Publikováno v:
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS, SIGNALS AND SYSTEMS 2019.
A hybrid photonic antenna which operates in 3.5 GHz band is evaluated using co-design and co-simulation techniques. A photodetector directly feeds the antenna without any RF components such as filter and amplifier without any RF components such as fi
Publikováno v:
Optics & Laser Technology. 147:107655
Numerical analysis on the effect of number of quantum wells (QW) on the modulation and distortion characteristics of 1300 nm Transistor Laser (TL) is reported. The terminal currents are found by using triangular charge model in the base region. The p
Publikováno v:
Optics Communications. 414:22-28
The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth,
Autor:
S. Piramasubramanian, M. Ganesh Madhan
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 12:152-161