Zobrazeno 1 - 10
of 27
pro vyhledávání: '"S. P. Watkins"'
Autor:
C. W. Fink, S. L. Watkins, T. Aramaki, P. L. Brink, S. Ganjam, B. A. Hines, M. E. Huber, N. A. Kurinsky, R. Mahapatra, N. Mirabolfathi, W. A. Page, R. Partridge, M. Platt, M. Pyle, B. Sadoulet, B. Serfass, S. Zuber
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085221-085221-6 (2020)
In this letter, we present the performance of a 100 μm × 400 μm × 40 nm W Transition-Edge Sensor with a critical temperature of 40 mK. This device has a noise equivalent power of 1.5×10-18 W/Hz, in a bandwidth of 2.6 kHz, indicating a resolution
Externí odkaz:
https://doaj.org/article/379f458b5f2245c49914fdcc184ae631
Publikováno v:
Canadian Journal of Physics. 74:212-215
We report optical identification of the exciton–polariton in epitaxial InAs by combined photoluminescence, reflectance, and transmittance spectroscopy. The photoluminescence of these samples showed identifiable spectral lines a thousand times narro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3507126029b147b36398da1b292a6437
https://doi.org/10.1139/p96-861
https://doi.org/10.1139/p96-861
Publikováno v:
Canadian Journal of Physics. 74:85-88
Reflectance difference spectroscopy (RDS) has been used to monitor the anisotropy of the surface of InAs and GaAs grown by atomic layer epitaxy (ALE). Saturation of the RDS signal is observed when the surface is fully covered with one monolayer of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52a9ee571ac8c0e18e7380fa8ebee238
https://doi.org/10.1139/p96-838
https://doi.org/10.1139/p96-838
Publikováno v:
Applied Physics Letters. 83:5548-5550
The electron impact ionization coefficient αn(E) in InP is determined from electron multiplication measurements in NpN InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs). The staggered (“type-II”) band lineup between the p+ GaAs0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08d51f4c21f60535e1d505555ed57c4b
https://doi.org/10.1063/1.1637446
https://doi.org/10.1063/1.1637446
Publikováno v:
Journal of Applied Physics. 75:2952-2956
Very high purity n‐type GaAs epilayers were grown by low pressure metalorganic chemical vapor deposition using triethylgallium and tertiarybutylarsine (TBA) or arsine (AsH3). Peak Hall mobilities of 209 000 cm2/V s at 45 K were observed for growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de72c83521c1c2323a3b73d18fe0e961
https://doi.org/10.1063/1.356191
https://doi.org/10.1063/1.356191
Publikováno v:
Journal of Applied Physics. 72:2797-2801
Residual donor and acceptor species were studied in a series of high purity n‐type InP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium (TMIn). Over the entire range of growth conditions, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48f04f436f029d738566111512ae67ff
https://doi.org/10.1063/1.352344
https://doi.org/10.1063/1.352344
Autor:
S. P. Watkins, G. Haacke
Publikováno v:
Journal of Applied Physics. 69:1625-1630
Magnetophotoluminescence spectroscopy (MPL) has been used to ascertain the source of donor impurities in high‐purity GaAs grown by atmospheric pressure metalorganic vapor deposition using arsine and trimethylgallium. A linear correlation between ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be1af5f333685828de94ec1ae11f9824
https://doi.org/10.1063/1.347259
https://doi.org/10.1063/1.347259
Publikováno v:
Applied Physics Letters. 71:2205-2207
We characterize the temperature (0.3⩽T⩽300 K), magnetic field(0⩽H⩽80 kOe), and thickness (0.1, 0.5, and 2.5 μm) dependence of the Hall response of high purity InAs epilayers grown using metalorganic chemical vapor deposition. The high sensit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7dfe1234f34f25ea159c31de25e6566b
https://doi.org/10.1063/1.120443
https://doi.org/10.1063/1.120443
Publikováno v:
Applied Physics Letters. 68:1960-1962
Temperature dependent Hall measurements were used to investigate the role of unintentional interfacial dopant layers on the electrical properties of high purity InP. Secondary ion mass spectroscopy was used to measure the level of Si contamination pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6448725d22949dbf82f32f47b3f414c
https://doi.org/10.1063/1.115639
https://doi.org/10.1063/1.115639
Autor:
S P Watkins, O Salehzadeh
Publikováno v:
Nanotechnology. 22:165603
Carbon is a commonly used p-type dopant in planar III-V semiconductors, however its use in nanowire (NW) growth has been much less reported. In this work we show that the morphology of gold assisted GaAs NWs can be strongly modified by the presence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1de6b0e2ee6def1d6f630ff6089e8306
https://doi.org/10.1088/0957-4484/22/16/165603
https://doi.org/10.1088/0957-4484/22/16/165603