Zobrazeno 1 - 10
of 71
pro vyhledávání: '"S. P. Pati"'
Autor:
E. Kuzmann, V. K. Garg, A. C. de Oliveira, L. Herojit Singh, S. S. Pati, E. M. Guimaraes, Tatiane O. dos Santos, M. Ádok-Sipiczki, P. Sipos, I. Pálinkó
Publikováno v:
Croatica Chemica Acta, Vol 88, Iss 4, Pp 369-376 (2015)
Layered double hydroxides (LDHs) are one of the very important nano-carriers for drug delivery, due to their many advantageous features, such as the ease and low-cost of preparation, low cytotoxicity, good biocompatibility, protection for the interca
Externí odkaz:
https://doaj.org/article/83a944ad4254454fac312db2c8564281
Publikováno v:
Advanced Science Letters. 22:545-550
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
We have studied the performance of impact avalanche transit time (IMPATT) devices based on wide band gap semiconductor materials like 4H-SiC and Wz-GaN over low band gap InP at 1.0 tera-hertz (THz) frequencies. A drift-diffusion model is used to desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::460d3b290f53a031bebec248abf3761c
https://doi.org/10.1007/978-3-319-97604-4_192
https://doi.org/10.1007/978-3-319-97604-4_192
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
The potential of heterostructure based impact avalanche transit time (IMPATT) devices have been studied and compared with homostructure diode. We have studied the simulation results of DC, SS and avalanche noise estimation of new types of materials c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::898354d879dce36200e82f00a0585a48
https://doi.org/10.1007/978-3-319-97604-4_177
https://doi.org/10.1007/978-3-319-97604-4_177
Autor:
S. P. Pati
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
Computer simulation experiment on studies of RF characteristics of high band gap ZnS (3.68 eV) based flat doped p+pnn+ DD Impatt diodes indicate possible generation of high mm wave-power with sufficiently high efficiency and considerable low noise. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d81a44f0ea5c81b08bc880850e4e636f
https://doi.org/10.1007/978-3-319-97604-4_35
https://doi.org/10.1007/978-3-319-97604-4_35
Publikováno v:
Physical chemistry chemical physics : PCCP. 19(12)
In this work, we investigated the temperature dependence of interface exchange coupling in an Ir-doped Fe
Publikováno v:
Advanced Science Letters. 20:1695-1699
Publikováno v:
Advanced Science Letters. 20:846-849
Publikováno v:
AIP Conference Proceedings.
In this paper, a new heterostructure based on GaAs/Ge impact ionization avalanche transit time diode (IMPATT) is investigated at 94 GHz design frequency, with an emphasis on the optimized current density. A complete theoretical simulation with valida
Publikováno v:
Indian Journal of Science and Technology. 9
Objectives: Quantum wires are one-dimensional (1-D) material that exhibit length to width ratios of about 1000 or more. The properties of quantum wire are due to the electrons in them have quantized energy levels perpendicular to their lengths. Such