Zobrazeno 1 - 5
of 5
pro vyhledávání: '"S. P. Novosyadlyy"'
Autor:
S. P. Novosyadlyy, I. M. Lutskiy
Publikováno v:
Фізика і хімія твердого тіла, Vol 16, Iss 2, Pp 413-419 (2016)
There is no doubt that the use of technology with field-effect transistors on GaAs Schottky to form a high-speed LSI has a great future. No fewer prospects facing unique in its properties SLHT - technology for the design of modern LSI / VLSI. In the
Externí odkaz:
https://doaj.org/article/0bef04be6d1c460883e31ab40130971a
Autor:
S. P. Novosyadlyy, A. M. Bosats'kyy
Publikováno v:
Фізика і хімія твердого тіла, Vol 16, Iss 1, Pp 221-229 (2016)
Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large integrated circuits structures o
Externí odkaz:
https://doaj.org/article/c82ec2257bc14fff9828dedb16e20256
Publikováno v:
PRECARPATHIAN BULLETIN OF THE SHEVCHENKO SCIENTIFIC SOCIETY Number. :45-58
The article presents the results of experimental studies using multi-charge dual implantation of ions of different masses (silicon, sulfur, selenium) for the formation of retrograde concentration profiles of n + n of Schottky transistors, which incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9179edbaf5911aca600fe1bd1156a64
https://doi.org/10.31471/2304-7399-2019-1(53)-45-58
https://doi.org/10.31471/2304-7399-2019-1(53)-45-58
Publikováno v:
PRECARPATHIAN BULLETIN OF THE SHEVCHENKO SCIENTIFIC SOCIETY Number. :61-118
Modern submicron technology of epitaxial GaAs-layout on monosilicon substrates requires significant development and improvement of precision low-temperature methods for the formation of functional layout in properties that are not inferior to layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::588dfcd3478126ba670d3c136c6f0869
https://doi.org/10.31471/2304-7399-2018-2(46)-61-118
https://doi.org/10.31471/2304-7399-2018-2(46)-61-118
Autor:
S. P. Novosyadlyy, I. M. Lutskiy
Publikováno v:
Фізика і хімія твердого тіла. 16:413-419
There is no doubt that the use of Schottky-based FET technology on GaAs to form high-speed LSIs has great potential. No less prospects are opened for the unique in their properties SLGT - technology for the design of modern LSI / VLSI.In the case of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b201455979b52071b5900bc379efdf5d
https://doi.org/10.15330/pcss.16.2.413-419
https://doi.org/10.15330/pcss.16.2.413-419