Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave Circuits

Autor: S. P. Novosyadlyy, I. M. Lutskiy

Publikováno v: Фізика і хімія твердого тіла, Vol 16, Iss 2, Pp 413-419 (2016)

There is no doubt that the use of technology with field-effect transistors on GaAs Schottky to form a high-speed LSI has a great future. No fewer prospects facing unique in its properties SLHT - technology for the design of modern LSI / VLSI. In the

Externí odkaz: https://doaj.org/article/0bef04be6d1c460883e31ab40130971a

RETROGRADE MULTI-CHARGE DUAL IMPLANTATION OF GaAs EPIC LAYERS ON MONO-Si SUBSTRATES

Autor: S. P. Novosyadlyy, S.V. Bastrykin, A. D. Semenyshyn, Y. I. Pavliuk

Publikováno v: PRECARPATHIAN BULLETIN OF THE SHEVCHENKO SCIENTIFIC SOCIETY Number. :45-58

The article presents the results of experimental studies using multi-charge dual implantation of ions of different masses (silicon, sulfur, selenium) for the formation of retrograde concentration profiles of n + n of Schottky transistors, which incre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9179edbaf5911aca600fe1bd1156a64
https://doi.org/10.31471/2304-7399-2019-1(53)-45-58

Ways to improve the performance of GaAs-sex Schottky transistors (PTSH) and selective-doped heterotransistors (SLGT) for the formation of modern microwave circuits

Autor: S. P. Novosyadlyy, I. M. Lutskiy

Publikováno v: Фізика і хімія твердого тіла. 16:413-419

There is no doubt that the use of Schottky-based FET technology on GaAs to form high-speed LSIs has great potential. No less prospects are opened for the unique in their properties SLGT - technology for the design of modern LSI / VLSI.In the case of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b201455979b52071b5900bc379efdf5d
https://doi.org/10.15330/pcss.16.2.413-419

The structure, parameters, the algorithm adaptive filters in digital signal processing of modern telecommunication systems.

Autor: Novosyadlyy, S. P, Novosyadlyy, S.V, Miller, L.V

Publikováno v: Proceedings of International Conference on Modern Problem of Radio Engineering, Telecommunications & Computer Science; 1/ 1/2012, p69-69, 1p