X‐ray photoelectron spectroscopic studies of chemical vapor deposition with TaF5precursor on polyimide surfaces

Autor: D. Ugolini, S. P. Kowalczyk, F. R. McFeely

Publikováno v: Journal of Applied Physics. 72:4912-4917

Chemical vapor deposition of Ta on the polyimide pyromellitic dianhydride oxydianiline was attempted using TaF5 as the precursor. The deposition temperature was 350 °C. Photoelectron spectroscopy measurements show that Ta is bound in a high oxidatio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c6d50304e78f14b52b9f094952a1a9d4
https://doi.org/10.1063/1.352058

A new correlation for Tc from Cu 2p absorption

Autor: Maria Ronay, F. J. Himpsel, A. Santoni, S. P. Kowalczyk, Louis J. Terminello, A.G. Schrott

Publikováno v: Solid State Communications. 77:699-702

We studied the Cu 2p x-ray absorption spectra of the superconductor La2−xSrxCuO4 in the doping regime x=0-0.6 and found that the intensity of the satellite peak is a reliable measure of the doping-induced hole concentration. From the Cu 2p absorpti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c7b76edd1f6ed6119950cf521e9decc
https://doi.org/10.1016/0038-1098(91)90772-n

Comparison of the selective adsorption and reactivity behavior of WF6and TaF5on SiO2and polyimide surfaces

Autor: Louis J. Terminello, S. P. Kowalczyk, F. R. McFeely

Publikováno v: Applied Physics Letters. 57:667-669

The initial stages of WF6 and TaF5 adsorption on SiO2 and polyimide surfaces were investigated by photoelectron spectroscopy. WF6 selectively adsorbs on Si relative to SiO2 and polyimide, while TaF5 exhibited nonselective adsorption behavior. This tr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::720329f625affa1524cf067f55828dc4
https://doi.org/10.1063/1.104254

A high-resolution X-ray photoemission study of the total valence-band densities of states of GaSe and BiI3

Autor: F. R. McFeely, Lothar Ley, D. A. Shirley, S. P. Kowalczyk

Publikováno v: Kowalczyk, S.P.; Ley, L.; McFeely, F.R.; & Shirley, D.A.(1975). A HIGH-RESOLUTION X-RAY PHOTOEMISSION STUDY OF THE TOTAL VALENCE-BAND DENSITIES OF STATES OF GaSe AND BiI3. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/9rs425qk

The total valence band denstiy of states spectra for the semiconducting layered compounds GaSe and BiI3 were obtained by X-ray photoemission spectroscopy. The results for GaSe were used to test recent band structure calculations and are compared with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e845eda7f62d388f3cbf863d67f86a7
https://doi.org/10.1016/0038-1098(75)90478-0

Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials

Autor: S. P. Kowalczyk, E. A. Kraut, J. R. Waldrop, R. W. Grant

Publikováno v: Physical Review Letters. 44:1620-1623

A highly precise method for locating the valence-band edge in x-ray photoemission spectra is reported. The application to measuring semiconductor interface potentials is discussed. X-ray photoemission-spectroscopy experiments on Ge and GaAs(110) crys

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94d8f5633015ab6c1be31993a2a9c036
https://doi.org/10.1103/physrevlett.44.1620