Zobrazeno 1 - 10
of 67
pro vyhledávání: '"S. P. Jeng"'
Autor:
Aurel Gunterus, M. F. Chen, Urmi Ray, Matt Nowak, Sam Gu, Amer Cassier, Sharon Chen, Ron Lindley, Brian Matthew Henderson, S. P. Jeng, Dong Wook Kim, C. H. Yu, Vidhya Ramachandran, C. H. Wu, Riko Radojcic
Publikováno v:
International Symposium on Microelectronics. 2013:000442-000446
We report on a 28nm product prototype test vehicle assembled back-to-face with a 4Gb 3× nm Wide I/O DRAM chip using Through Si Stacking (TSS) technology. The high bandwidth interface of the digital chip to the wide I/O memory chip is enabled by ∼1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::650f19b9266df7cd7ba70317e3a4e73b
https://doi.org/10.4071/isom-2013-wa13
https://doi.org/10.4071/isom-2013-wa13
Publikováno v:
Microelectronic Engineering. :255-259
It is well-known that capacitance in the metallization is becoming too great to allow the continued use of SiO/sub 2/ as the intermetal dielectric below about the 0.25 /spl mu/m technology node. One of many possible replacements for SiO/sub 2/ are or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33e319f5f501a9e8ccf89ddf770d2a1e
https://doi.org/10.1016/s0167-9317(97)00120-2
https://doi.org/10.1016/s0167-9317(97)00120-2
Publikováno v:
Journal of Applied Physics. 78:7419-7421
Thermally induced reactions in TiN/Al–Cu/TiN have been investigated. It is observed that the amount of the reactions is different at the two interfaces between Al–Cu and TiN. While there is minimal reaction between Al–Cu and the TiN overlayer,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b97d9cfa8bcdfaa881efa29411b9e0e9
https://doi.org/10.1063/1.360398
https://doi.org/10.1063/1.360398
Autor:
Robert H. Havemann, Kelly J. Taylor, John W. Fattaruso, Thomas R. Seha, S. P. Jeng, Mi-Chang Chang
Publikováno v:
1995 Symposium on VLSI Technology. Digest of Technical Papers.
Hydrogen silsesquioxane (HSQ) is a low density material for intra-metal gapfill, that offers low permittivity for interconnect capacitance reduction. Films with k as low as /spl sim/2.2 preferentially form between tightly-spaced metal leads when cure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f223cda008c1a2d55c1cfa39cb93f62d
https://doi.org/10.1109/vlsit.1995.520858
https://doi.org/10.1109/vlsit.1995.520858
Publikováno v:
Applied Physics Letters. 61:1310-1312
The diffusion of ion implanted F in Si has been studied by the use of secondary ion mass spectroscopy and thermal desorption spectroscopy. In the dose range studied (below amorphization threshold), F exhibits an anomalous out‐diffusion behavior whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97640309612a40e9b943e940f59a53cb
https://doi.org/10.1063/1.107575
https://doi.org/10.1063/1.107575
Publikováno v:
European Workshop Materials for Advanced Metallization.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3947723be281c48e9b94ca1008336afc
https://doi.org/10.1109/mam.1997.621060
https://doi.org/10.1109/mam.1997.621060
Publikováno v:
MRS Proceedings. 381
Methyl siloxane spin-on-glass (SOG) is a conventional gap-filling material. In accordance with the requirement of low permittivity, many of major SOG suppliers are developing new types of methyl siloxane SOGs.The most interesting property of these SO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee70617b2db53e31968c4db0f7422fc
https://doi.org/10.1557/proc-381-255
https://doi.org/10.1557/proc-381-255
Publikováno v:
MRS Proceedings. 381
Low density silica xerogels have many properties which suggest their use as a low dielectric constant material. Recent process improvements to control capillary pressure and strength by employing aging and pore chemistry modification, such that shrin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff83fe67b60f03ffa06f8cd27ba60876
https://doi.org/10.1557/proc-381-261
https://doi.org/10.1557/proc-381-261
Publikováno v:
MRS Proceedings. 381
Low dielectric constant interlayer dielectric ( ILD) materials are required for the advanced silicon integrated electronics such as those in the ULSI era[3, 10]. We have investigated several such materials. In this paper the results of our investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1520cf1887f1f11ccfdf7086a6a70184
https://doi.org/10.1557/proc-381-31
https://doi.org/10.1557/proc-381-31
Publikováno v:
MRS Proceedings. 337
Interconnect delay is shown to be a performance-limiting factor for ULSI circuits when feature size is scaled into the deep submicron region, due to a rapid increase in interconnect resistivity and capacitance. Dielectric materials with lower values
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ee5d0b9678cb3d9aebb9eb25983af24
https://doi.org/10.1557/proc-337-25
https://doi.org/10.1557/proc-337-25